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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films 期刊论文 journal of applied physics, 2014, 卷号: 115, 期号: 16, 页码: 163704 Yang, J; Zhao, DG; Jiang, DS; Zhu, JJ; Yang, H; Chen, P; Liu, ZS; Le, LC; Li, XJ; He, XG; Liu, JP; Zhang, SM; Wang, H 收藏  |  浏览/下载：25/0  |  提交时间：2015/04/02 Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes 期刊论文 optics express, 2014, 卷号: 22, 期号: 10, 页码: 11392-11398 Le, LC; Zhao, DG; Jiang, DS; Yang, H; Chen, P; Liu, ZS; Yang, J; He, XG; Li, XJ; Liu, JP; Zhu, JJ; Zhang, SM 收藏  |  浏览/下载：21/0  |  提交时间：2015/03/25 Performance comparison of front- and back-illuminated modes of the AlGaN-based p-i-n solar-blind ultraviolet photodetectors 期刊论文 journal of vacuum science & technology b, 2014, 卷号: 32, 期号: 3, 页码: 031204 Li, XJ; Zhao, DG; Jiang, DS; Liu, ZS; Chen, P; Le, LC; Yang, J; He, XG; Zhang, SM; Zhu, JJ; Wang, H; Zhang, BS; Liu, JP; Yang, H 收藏  |  浏览/下载：16/0  |  提交时间：2015/04/02 A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe 期刊论文 chinese physics letters, 2013, 卷号: 30, 期号: 10, 页码: 104205 Chen, P; Zhao, DG; Feng, MX; Jiang, DS; Liu, ZS; Zhang, LQ; Li, DY; Liu, JP; Wang, H; Zhu, JJ; Zhang, SM; Zhang, BS; Yang, H 收藏  |  浏览/下载：17/0  |  提交时间：2014/04/09 Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN 期刊论文 chinese physics letters, 2012, 卷号: 29, 期号: 1, 页码: 17301 Zeng, C; Zhang, SM; Wang, H; Liu, JP; Wang, HB; Li, ZC; Feng, MX; Zhao, DG; Liu, ZS; Jiang, DS; Yang, H 收藏  |  浏览/下载：10/0  |  提交时间：2013/03/17 Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate 期刊论文 journal of crystal growth, 2004, 卷号: 260, 期号: 3-4, 页码: 331-335 作者:  Zhao DG 收藏  |  浏览/下载：207/73  |  提交时间：2010/03/09 full-width at half-maximum   Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer 期刊论文 journal of crystal growth, 2004, 卷号: 270, 期号: 3-4, 页码: 316-321 作者:  Zhao DG 收藏  |  浏览/下载：192/51  |  提交时间：2010/03/09 X-ray diffraction   Indium mole fraction effect on the structural and optical properties of quaternary AlInGaN epilayers 期刊论文 journal of physics d-applied physics, 2004, 卷号: 37, 期号: 15, 页码: 2060-2063 Liu, JP; Jin, RQ; Zhang, JC; Wang, JF; Wu, M; Zhu, JJ; Zhao, DG; Wang, YT; Yang, H 收藏  |  浏览/下载：69/23  |  提交时间：2010/03/09 LIGHT-EMITTING-DIODES   The influence of AlN buffer layer thickness on the properties of GaN epilayer 期刊论文 journal of crystal growth, 2004, 卷号: 268, 期号: 1-2, 页码: 24-29 作者:  Zhao DG 收藏  |  浏览/下载：56/32  |  提交时间：2010/03/09 buffer layer