Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate

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	Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate
	Zhao DG
刊名	journal of crystal growth
	2004
卷号	260 期号:3-4 页码:331-335
关键词	full-width at half-maximum
ISSN号	0022-0248
通讯作者	wu, m, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china.
中文摘要	the effect of the n/al ratio of aln buffers on the optical and crystal quality of gan films, grown by metalorganic chemical vapor deposition on si(111) substrates, has been investigated. by optimizing the n/al ratio during the aln buffer, the threading dislocation density and the tensile stress have been decreased. high-resolution x-ray diffraction exhibited a (0002) full-width at half-maximum as low as 396 acrsec. the variations of the tensile stress existing in the gan films were approved by the redshifts of the donor bound exiton peaks in the low-temperature photoluminescence measurement at 77 k. (c) 2003 elsevier b.v. all rights reserved.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8226]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao DG. Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate[J]. journal of crystal growth,2004,260(3-4):331-335.
APA	Zhao DG.(2004).Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate.journal of crystal growth,260(3-4),331-335.
MLA	Zhao DG."Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate".journal of crystal growth 260.3-4(2004):331-335.