Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN

	Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN
	Zeng, C ; Zhang, SM ; Wang, H ; Liu, JP ; Wang, HB ; Li, ZC ; Feng, MX ; Zhao, DG ; Liu, ZS ; Jiang, DS ; Yang, H
刊名	chinese physics letters
	2012
卷号	29 期号:1 页码:17301
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2013-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23689]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Zeng, C,Zhang, SM,Wang, H,et al. Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN[J]. chinese physics letters,2012,29(1):17301.
APA	Zeng, C.,Zhang, SM.,Wang, H.,Liu, JP.,Wang, HB.,...&Yang, H.(2012).Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN.chinese physics letters,29(1),17301.
MLA	Zeng, C,et al."Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN".chinese physics letters 29.1(2012):17301.