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| Comparative Investigation of Semipolar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers 期刊论文 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7446-7450 作者: Wang Lianshan; Zhao Guijuan; Meng Yulin; Li Huijie; Yang Shaoyan; Wang Zhanguo 收藏  |  浏览/下载:28/0  |  提交时间:2019/11/15 |
| Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy 期刊论文 Applied Physics A, 2018, 卷号: 124, 期号: 2, 页码: 130 作者: Guijuan Zhao; Huijie Li; Lianshan Wang; Yulin Meng; Fangzheng Li; Hongyuan Wei; Shaoyan Yang; Zhanguo Wang 收藏  |  浏览/下载:27/0  |  提交时间:2019/11/15 |
| Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters 期刊论文 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 卷号: 215, 期号: 23, 页码: 1800455 作者: Meng Yulin; Wang Lianshan; Zhao Guijuan; Li Fangzheng; Li Huijie; Yang Shaoyan; Wang Zhanguo 收藏  |  浏览/下载:28/0  |  提交时间:2019/11/15 |
| Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure 期刊论文 APPLIED PHYSICS LETTERS, 2018, 卷号: 112, 期号: 5, 页码: 052105 作者: Guijuan Zhao; Lianshan Wang; Huijie Li; Yulin Meng; Fangzheng Li; Shaoyan Yang; Zhanguo Wang 收藏  |  浏览/下载:27/0  |  提交时间:2019/11/15 |
| The Residual Stress and Al Incorporation of AlGaN Epilayers by Metalorganic Chemical Vapor Deposition 期刊论文 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7484-7488 作者: Li Fangzheng; Wang Lianshan; Zhao Guijuan; Meng Yulin; Li Huijie; Chen Yanan; Yang Shaoyan; Jin Peng; Wang Zhanguo 收藏  |  浏览/下载:27/0  |  提交时间:2019/11/15 |
| Anisotropically biaxial strain in non-polar (112-0) plane InxGa1-xN/GaN layers investigated by X-ray reciprocal space mapping 期刊论文 SCIENTIFIC REPORTS, 2017, 卷号: 7, 页码: 4497 作者: Guijuan Zhao; Huijie Li; Lianshan Wang; Yulin Meng; Zesheng Ji 收藏  |  浏览/下载:30/0  |  提交时间:2018/05/23 |
| Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer 期刊论文 Superlattices and Microstructures, 2017, 卷号: 110, 页码: 324-329 作者: Fangzheng Li 收藏  |  浏览/下载:19/0  |  提交时间:2018/05/23 |
| Performance enhancement of AlGaN-based ultraviolet light-emitting diodes by inserting the last quantum well into electron blocking layer 期刊论文 Superlattices and Microstructures, 2017, 卷号: 110, 页码: 324-329 作者: Fangzheng Li; Lianshan Wang; Guijuan Zhao; Yulin Meng; Huijie Li 收藏  |  浏览/下载:22/0  |  提交时间:2018/05/23 |
| Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition 期刊论文 Chinese Physics B, 2017, 卷号: 26, 期号: 7, 页码: 078102 作者: Zesheng Ji; Lianshan Wang; Guijuan Zhao; Yulin Meng; Fangzheng Li 收藏  |  浏览/下载:19/0  |  提交时间:2018/05/23 |
| The immiscibility of InAlN ternary alloy 期刊论文 scientific reports, 2016, 卷号: 6, 页码: 26600 Guijuan Zhao; Xiaoqing Xu; Huijie Li; Hongyuan Wei; Dongyue Han; Zesheng Ji; Yulin Meng; Lianshan Wang; Shaoyan Yang 收藏  |  浏览/下载:23/0  |  提交时间:2017/03/10 |