Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters

	Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters
	Meng Yulin; Wang Lianshan; Zhao Guijuan; Li Fangzheng; Li Huijie; Yang Shaoyan; Wang Zhanguo
刊名	PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
	2018
卷号	215 期号:23 页码:1800455
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29176]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Meng Yulin;Wang Lianshan;Zhao Guijuan;Li Fangzheng;Li Huijie;Yang Shaoyan;Wang Zhanguo. Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2018,215(23):1800455.
APA	Meng Yulin;Wang Lianshan;Zhao Guijuan;Li Fangzheng;Li Huijie;Yang Shaoyan;Wang Zhanguo.(2018).Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,215(23),1800455.
MLA	Meng Yulin;Wang Lianshan;Zhao Guijuan;Li Fangzheng;Li Huijie;Yang Shaoyan;Wang Zhanguo."Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters".PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 215.23(2018):1800455.