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浏览/检索结果: 共13条，第1-10条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 In-plane Schottky-barrier field-effect transistors based on 1T/2H heterojunctions of transition-metal dichalcogenides 期刊论文 Physical Review B, 2017, 卷号: 96, 期号: 16, 页码: 165402 作者:  Zhi-Qiang Fan;  Xiang-Wei Jiang;  Jun-Wei Luo;  Li-Ying Jiao;  Ru Huang 收藏  |  浏览/下载：48/0  |  提交时间：2018/06/15 Bright Single-Photon Source at 1.3 μm Based on InAs Bilayer Quantum Dot in Micropillar 期刊论文 Nanoscale Research Letters, 2017, 卷号: 12, 期号: 1, 页码: 378 作者:  Ze-Sheng Chen;  Ben Ma;  Xiang-Jun Shang;  Hai-Qiao Ni;  Jin-Liang Wang 收藏  |  浏览/下载：19/0  |  提交时间：2018/06/15 Large optical Stark shifts in single quantum dots coupled to core–shell GaAs/AlGaAs nanowires 期刊论文 Nanoscale, 2017, 卷号: 9, 页码: 5483–5488 作者:  Ying Yu;  Yu-Ming Wei;  Jing Wang;  Jia-Hua Li;  Xiang-Jun Shang 收藏  |  浏览/下载：24/0  |  提交时间：2018/06/15 Structural discontinuity induced surface second harmonic generation in single; thin zinc-blende GaAs nanowires 期刊论文 Nanoscale, 2017, 卷号: 9, 页码: 16066–16072 作者:  Yu-Ming Wei;  Ying Yu;  Jing Wang;  Lin Liu;  Hai-Qiao Ni 收藏  |  浏览/下载：23/0  |  提交时间：2018/06/15 Telecommunication Wavelength-Band Single-Photon Emission from Single Large InAs Quantum Dots Nucleated on Low-Density Seed Quantum Dots 期刊论文 nanoscale research letters, 2016, 卷号: 11, 期号: 1, 页码: 382 Ze-Sheng Chen; Ben Ma; Xiang-Jun Shang; Yu He; Li-Chun Zhang; Hai-Qiao Ni; Jin-Liang Wang; Zhi-Chuan Niu 收藏  |  浏览/下载：31/0  |  提交时间：2017/03/10 High quality above 3-μm mid-infrared InGaAsSb_AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy 期刊论文 Chin.Phys.B, 2013, 卷号: 23, 期号: 1, 页码: 017805 Xing Jun-Liang, Zhang Yu, Xu Ying-Qiang, Wang Guo-Wei, Wang Juan, Xiang Wei, Ni Hai-Qiao, Ren Zheng-Wei, He Zhen-Hong, Niu Zhi-Chuan 收藏  |  浏览/下载：14/0  |  提交时间：2014/03/26 Single InAs quantum dot coupled to different “environments” in one wafer for quantum 期刊论文 Applied Physics Letters, 2013, 卷号: 102, 期号: 20, 页码: 201103 Yu, Ying; Shang, Xiang-Jun; Li, Mi-Feng; Zha, Guo-Wei; Xu, Jian-Xing; Wang, Li-Juan; Wang, Guo-Wei; Ni, Hai-Qiao; Dou, Xiuming; Sun, Baoquan; Niu, Zhi-Chuan 收藏  |  浏览/下载：27/0  |  提交时间：2014/03/26 Molecular beam epitaxy growth of high electron mobility InAs AlSb deep 期刊论文 journal of applied physics, 2013, 卷号: 114, 期号: 1, 页码: 013704 Juan Wang, Guo-Wei Wang, Ying-Qiang Xu, Jun-Liang Xing, Wei Xiang, Bao Tang, Yan Zhu, Zheng-Wei Ren, Zhen-Hong He, Zhi-Chuan Niu 收藏  |  浏览/下载：24/0  |  提交时间：2014/03/26 Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire 期刊论文 nano letters, 2013, 卷号: 13, 期号: 4, 页码: 1399-1404 Yu, Ying; Li, Mi-Feng; He, Ji-Fang; Ni, Hai-Qiao; Niu, Zhi-Chuan; He, Yu-Ming; Wei, Yu-Jia; He, Yu; Zha, Guo-Wei; Shang, Xiang-Jun; Wang, Juan; Wang, Li-Juan; Wang, Guo-Wei 收藏  |  浏览/下载：16/0  |  提交时间：2013/09/17 Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy 期刊论文 optoelectronics letters, 2011, 卷号: 7, 期号: 5, 页码: 325-329 Zhu, Yan; Ni, Hai-qiao; Wang, Hai-li; He, Ji-fang; Li, Mi-feng; Shang, Xiang-jun; Niu, Zhi-chuan 收藏  |  浏览/下载：12/0  |  提交时间：2012/06/14 Epitaxial growth  Gallium arsenide  Growth(materials)  Molecular beam epitaxy  Semiconducting gallium  Semiconducting indium  Semiconductor quantum wells