In-plane Schottky-barrier field-effect transistors based on 1T/2H heterojunctions of transition-metal dichalcogenides

	In-plane Schottky-barrier field-effect transistors based on 1T/2H heterojunctions of transition-metal dichalcogenides
	Zhi-Qiang Fan; Xiang-Wei Jiang; Jun-Wei Luo; Li-Ying Jiao; Ru Huang; Shu-Shen Li; Lin-Wang Wang
刊名	Physical Review B
	2017
卷号	96 期号:16 页码:165402
学科主题	半导体物理
公开日期	2018-06-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28571]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Zhi-Qiang Fan,Xiang-Wei Jiang,Jun-Wei Luo,et al. In-plane Schottky-barrier field-effect transistors based on 1T/2H heterojunctions of transition-metal dichalcogenides[J]. Physical Review B,2017,96(16):165402.
APA	Zhi-Qiang Fan.,Xiang-Wei Jiang.,Jun-Wei Luo.,Li-Ying Jiao.,Ru Huang.,...&Lin-Wang Wang.(2017).In-plane Schottky-barrier field-effect transistors based on 1T/2H heterojunctions of transition-metal dichalcogenides.Physical Review B,96(16),165402.
MLA	Zhi-Qiang Fan,et al."In-plane Schottky-barrier field-effect transistors based on 1T/2H heterojunctions of transition-metal dichalcogenides".Physical Review B 96.16(2017):165402.