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Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells 期刊论文
applied physics letters, 2005, 卷号: 87, 期号: 7, 页码: art.no.071908
作者:  Jiang DS;  Zhang JC;  Yang H;  Zhang JC;  Zhang JC
收藏  |  浏览/下载:63/14  |  提交时间:2010/03/17
Investigations on optical properties of AlGaInN epilayers grown by mocvd 期刊论文
journal of infrared and millimeter waves, 2005, 卷号: 24, 期号: 3, 页码: 193-197
作者:  Yang H;  Jiang DS;  Yang H
收藏  |  浏览/下载:59/21  |  提交时间:2010/03/17
In situ doping control for growth of n-p-n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy 期刊论文
journal of crystal growth, 2005, 卷号: 273, 期号: 3-4, 页码: 381-385
作者:  Liu C
收藏  |  浏览/下载:18/0  |  提交时间:2010/03/17
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