Investigations on optical properties of AlGaInN epilayers grown by mocvd

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Investigations on optical properties of AlGaInN epilayers grown by mocvd
	Yang H; Jiang DS; Yang H
刊名	journal of infrared and millimeter waves
	2005
卷号	24 期号:3 页码:193-197
关键词	nitrides
ISSN号	1001-9014
通讯作者	jiang, ds, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: dsjiang@red.semi.ac.cn
中文摘要	microscopic luminescence and raman scattering study was carried on aiingan quaternary alloy. based on the analyses of sem image and cathodoluminescence spectra measured around v-defects, the correlation between v-defect formation and indium segregation was clarified. raman scattering of thin alingan epilayers was investigated by using the short wavelength excitation of 325nm laser line. the frequency shift of a(1)(lo) phonon induced by the change of al composition in alloy was observed. the raman scattering of lo phonons was found to be resonantly enhanced with outgoing resonance, and it is attributed to the cascade-like electron-multiphonon interaction mechanism.
学科主题	光电子学
收录类别	SCI
语种	中文
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8656]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yang H,Jiang DS,Yang H. Investigations on optical properties of AlGaInN epilayers grown by mocvd[J]. journal of infrared and millimeter waves,2005,24(3):193-197.
APA	Yang H,Jiang DS,&Yang H.(2005).Investigations on optical properties of AlGaInN epilayers grown by mocvd.journal of infrared and millimeter waves,24(3),193-197.
MLA	Yang H,et al."Investigations on optical properties of AlGaInN epilayers grown by mocvd".journal of infrared and millimeter waves 24.3(2005):193-197.