In situ doping control for growth of n-p-n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy

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	In situ doping control for growth of n-p-n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy
	Liu C
刊名	journal of crystal growth
	2005
卷号	273 期号:3-4 页码:381-385
关键词	doping
ISSN号	0022-0248
通讯作者	gao, f, shaanxi normal univ, coll phys & informat technol, xian 710062, peoples r china. 电子邮箱地址: feigao@snnu.edu.cn
中文摘要	n-p-n si/sige/si heterostructures have been grown by a disilane (si2h6) gas and ge solid sources molecular beam epitaxy system using phosphine (ph3) and diborane (b2h6) as n- and p-type in situ doping sources, respectively. adopting an in situ doping control technology, the influence of background b dopant on the growth of n-si emitter layer was reduced, and an abrupt b dopant distribution from sige base to si emitter layer was obtained. besides, higher n-type doping in the surface region of emitter to reduce the emitter resist can be realized, and it did not result in the drop of growth rate of si emitter layer in this technology. (c) 2004 elsevier b.v. all rights reserved.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8900]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu C. In situ doping control for growth of n-p-n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy[J]. journal of crystal growth,2005,273(3-4):381-385.
APA	Liu C.(2005).In situ doping control for growth of n-p-n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy.journal of crystal growth,273(3-4),381-385.
MLA	Liu C."In situ doping control for growth of n-p-n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy".journal of crystal growth 273.3-4(2005):381-385.