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Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet 期刊论文
CHINESE SCIENCE BULLETIN, 2014, 卷号: 59, 期号: 16, 页码: 1903-1906
作者:  Li DY(李德尧);  Wang HB(王怀兵);  Liu JP(刘建平);  Zhang SM(张书明)
收藏  |  浏览/下载:19/0  |  提交时间:2014/12/08
Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 16
作者:  Zhang SM(张书明);  Yang H(杨辉);  Liu JP(刘建平);  Yang, J
收藏  |  浏览/下载:13/0  |  提交时间:2014/12/19
Realization of InGaN laser diodes above 500 nm by growth optimization of the InGaN/GaN active region 期刊论文
APPLIED PHYSICS EXPRESS, 2014, 卷号: 7, 期号: 11
作者:  Liu, JP (刘建平);  Zhang, SM (张书明);  Zhang, LQ (张立群);  Li, DY (李德尧);  Yang, H (杨辉)
收藏  |  浏览/下载:21/0  |  提交时间:2015/02/03
Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 14, 页码: 0
作者:  Liu, JP (刘建平)
收藏  |  浏览/下载:15/0  |  提交时间:2015/02/03
Temperature Dependence of Emission Properties of Self-Assembled InGaN Quantum Dots 期刊论文
CHINESE PHYSICS LETTERS, 2014, 卷号: 31, 期号: 11
作者:  Liu, JP (刘建平)
收藏  |  浏览/下载:18/0  |  提交时间:2015/02/03


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