Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 刘建平团队

	Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation
	Liu, JP (刘建平)
刊名	APPLIED PHYSICS LETTERS
	2014
卷号	104 期号:14 页码:0
关键词	EXTERNAL QUANTUM EFFICIENCY EXTRACTION EFFICIENCY PHOTONIC CRYSTALS ULTRAVIOLET BLUE
通讯作者	Ryou, JH (Ryou, Jae-Hyun)
英文摘要	We report on the direct patterning of two-dimensional periodic structures in GaN-based light-emitting diodes (LEDs) through laser interference ablation for the fast and reliable fabrication of periodic micro-and nano-structures aimed at enhancing light output. Holes arranged in a two-dimensional hexagonal lattice array having an opening size of 500 nm, depth of 50 nm, and a periodicity of 1 mu m were directly formed by three-beam laser interference without photolithography or electron-beam lithography processes. The laser-patterned LEDs exhibit an enhancement in light output power of 20% compared to conventional LEDs having a flat top surface without degradation of electrical and optical properties of the top p-GaN layer and the active region, respectively.
收录类别	SCI
语种	英语
WOS记录号	WOS:000334849200005
公开日期	2015-02-03
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/1786]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Liu, JP . Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation[J]. APPLIED PHYSICS LETTERS,2014,104(14):0.
APA	Liu, JP .(2014).Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation.APPLIED PHYSICS LETTERS,104(14),0.
MLA	Liu, JP ."Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation".APPLIED PHYSICS LETTERS 104.14(2014):0.