Temperature Dependence of Emission Properties of Self-Assembled InGaN Quantum   Dots

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 刘建平团队

	Temperature Dependence of Emission Properties of Self-Assembled InGaN Quantum Dots
	Liu, JP (刘建平)
刊名	CHINESE PHYSICS LETTERS
	2014
卷号	31 期号:11
关键词	LOCALIZATION STRAIN LEDS
通讯作者	Zhang, BP (Zhang Bao-Ping)
英文摘要	Emission properties of self-assembled green-emitting InGaN quantum dots (QDs) grown on sapphire substrates by using metal organic chemical vapor deposition are studied by temperature-dependent photoluminescence (PL) measurements. As temperature increases (15-300 K), the PL peak energy shows an anomalous V-shaped (redshift- blueshift) variation instead of an S-shaped (redshift-blueshift-redshift) variation, as observed typically in green-emitting InGaN/GaN multi-quantum wells (MQWs). The PL full width at half maximum (FWHM) also shows a V-shaped (decrease-increase) variation. The temperature dependence of the PL peak energy and FWHM of QDs are well explained by a model similar to MQWs, in which carriers transferring in localized states play an important role, while the confinement energy of localized states in the QDs is significantly larger than that in MQWs. By analyzing the integrated PL intensity, the larger confinement energy of localized states in the QDs is estimated to be 105.9 meV, which is well explained by taking into account the band-gap shrinkage and carrier thermalization with temperature. It is also found that the nonradiative combination centers in QD samples are much less than those in QW samples with the same In content.
收录类别	SCI
语种	英语
公开日期	2015-02-03
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/1852]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Liu, JP . Temperature Dependence of Emission Properties of Self-Assembled InGaN Quantum Dots[J]. CHINESE PHYSICS LETTERS,2014,31(11).
APA	Liu, JP .(2014).Temperature Dependence of Emission Properties of Self-Assembled InGaN Quantum Dots.CHINESE PHYSICS LETTERS,31(11).
MLA	Liu, JP ."Temperature Dependence of Emission Properties of Self-Assembled InGaN Quantum Dots".CHINESE PHYSICS LETTERS 31.11(2014).