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| Temperature Insensitivity of Optical Properties of InAs/GaAs Quantum Dots due to a Pregrown InGaAs Quantum Well 期刊论文 chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017802 作者: Jin P 收藏  |  浏览/下载:167/34  |  提交时间:2010/03/08
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| Dependence of intrinsic defects in ZnO films on oxygen fraction studied by positron annihilation 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 2, 页码: 489-492 Peng CX; Weng HM; Yang XJ; Ye BJ; Cheng B; Zhou XY; Han RD 收藏  |  浏览/下载:235/9  |  提交时间:2010/04/11
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| As-doped p-type ZnO films by sputtering and thermal diffusion process 期刊论文 journal of applied physics, 2006, 卷号: 100, 期号: 4, 页码: art.no.043704 Wang P (Wang Peng); Chen NF (Chen Nuofu); Yin ZG (Yin Zhigang); Yang F (Yang Fei); Peng CT (Peng Changtao); Dai RX (Dai Ruixuan); Bai YM (Bai Yiming) 收藏  |  浏览/下载:37/0  |  提交时间:2010/04/11
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| Green-light-emitting ZnSe nanowires fabricated via vapor phase growth 期刊论文 applied physics letters, 2003, 卷号: 82, 期号: 19, 页码: 3330-3332 Xiang B; Zhang HZ; Li GH; Yang FH; Su FH; Wang RM; Xu J; Lu GW; Sun XC; Zhao Q; Yu DP 收藏  |  浏览/下载:111/0  |  提交时间:2010/08/12
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| Mechanisms of the sidewall facet evolution in lateral epitaxial overgrowth of GaN by MOCVD 期刊论文 journal of physics d-applied physics, 2002, 卷号: 35, 期号: 21, 页码: 2731-2734 作者: Zhao DG 收藏  |  浏览/下载:40/0  |  提交时间:2010/08/12
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| Growth and photoluminescence of epitaxial CeO2 film on Si (111) substrate 期刊论文 chinese physics letters, 2001, 卷号: 18, 期号: 3, 页码: 443-444 Gao F; Li GH; Zhang JH; Qin FG; Yao ZY; Liu ZK; Wang ZG; Lin LY 收藏  |  浏览/下载:105/9  |  提交时间:2010/08/12
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| Surface acoustic wave velocity and electromechanical coupling coefficient of GaN grown on (0001) sapphire by metal-organic vapour phase epitaxy 期刊论文 chinese physics letters, 2001, 卷号: 18, 期号: 10, 页码: 1418-1419 作者: Han PD 收藏  |  浏览/下载:84/7  |  提交时间:2010/08/12
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| Polarity dependence of hexagonal GaN films on two opposite c faces of Al2O3 substrate 期刊论文 applied physics letters, 2001, 卷号: 78, 期号: 25, 页码: 3974-3976 作者: Han PD 收藏  |  浏览/下载:76/9  |  提交时间:2010/08/12
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| Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation 期刊论文 applied physics letters, 2001, 卷号: 78, 期号: 17, 页码: 2509-2511 Sheng SR; Liao XB; Kong GL 收藏  |  浏览/下载:103/17  |  提交时间:2010/08/12
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| Influence of indium composition on the surface morphology of self-organized InxGa1-xAs quantum dots on GaAs substrates 期刊论文 journal of applied physics, 2000, 卷号: 87, 期号: 1, 页码: 188-191 Li HX; Zhuang QD; Wang ZG; Daniels-Race T 收藏  |  浏览/下载:46/0  |  提交时间:2010/08/12
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