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Electron mobility of inverted InAs/GaSb quantum well structure 期刊论文
Solid State Communications, 2017, 卷号: 267, 页码: 29-32
作者:  Wenjun Huang;  Wenquan Ma;  Jianliang Huang;  Yanhua Zhang;  Yulian Cao
收藏  |  浏览/下载：26/0  |  提交时间：2018/05/23
Angular Dependence of the Spin Photocurrent in a Co−Fe−B/MgO/n−i−p GaAs Quantum-Well Structure 期刊论文
PHYSICAL REVIEW APPLIED, 2017, 卷号: 8, 页码: 064022
作者:  Laipan Zhu;  Wei Huang;  Pierre Renucci;  Xavier Marie;  Yu Liu
收藏  |  浏览/下载：36/0  |  提交时间：2018/05/23
1.06-μm InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure. 期刊论文
Optics Letters, 2013, 卷号: 38, 期号: 22, 页码: 4868-4871
Wang H, Mi J, Zhou X, Meriggi L, Steer M, Cui B, Chen W, Pan J, Ding Y.
收藏  |  浏览/下载：15/0  |  提交时间：2014/03/18
Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures 期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 2, 页码: 23705
Liu GP; Wu J; Lu YW; Li ZW; Song YF; Li CM; Yang SY; Liu XL; Zhu QS; Wang ZG
收藏  |  浏览/下载：23/0  |  提交时间：2012/02/06
Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.84345
Kong JX; Zhu QS; Xu B; Wang ZG
收藏  |  浏览/下载：39/3  |  提交时间：2011/07/05
An intermediate-band-assisted avalanche multiplication in InAs/InGaAs quantum dots-in-well infrared photodetector 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.73504
Lin L; Zhen HL; Zhou XH; Li N; Lu W; Liu FQ
收藏  |  浏览/下载：40/5  |  提交时间：2011/07/05
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108
Wang B; Li ZC; Yao R; Liang M; Yan FW; Wang GH
收藏  |  浏览/下载：93/5  |  提交时间：2011/07/05
Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.102104
作者:  Deng QW
收藏  |  浏览/下载：47/5  |  提交时间：2011/07/05
InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 2, 页码: article no.28402
作者:  Hou QF;  Yin HB
收藏  |  浏览/下载：43/6  |  提交时间：2011/07/05
Theoretical study on InxGa1-xN/GaN quantum dots solar cell 期刊论文
physica b-condensed matter, 2011, 卷号: 406, 期号: 1, 页码: 73-76
作者:  Hou QF;  Yin HB;  Deng QW
收藏  |  浏览/下载：92/9  |  提交时间：2011/07/05

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