Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate | |
Kong JX ; Zhu QS ; Xu B ; Wang ZG | |
刊名 | journal of applied physics |
2011 | |
卷号 | 109期号:8页码:article no.84345 |
ISSN号 | 0021-8979 |
通讯作者 | kong, jx, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. jxkong@semi.ac.cn |
学科主题 | 半导体材料 |
收录类别 | SCI |
资助信息 | national research project of china [60990315] |
语种 | 英语 |
公开日期 | 2011-07-05 ; 2011-07-15 |
附注 | an inas/in0.73ga0.27as/in0.53ga0.47as/in0.53al0.235ga0.235as quantum dashes-in-a-step-well (qdswell) structure grown via molecular beam epitaxy has been studied. it is observed that the photoluminescence (pl) emission wavelength of such a structure can be as long as 2.12 mu m at room temperature (rt). this is the longest emission wavelength of inas qdashes to be realized at rt. the electron and hole energy levels of the inas/in0.73ga0.27as/in0.53ga0.47as/in0.53al0.235ga0.235as qdswell structure have been calculated using effective-mass envelope-function theory. the calculated transition energy ee1-hh1 (from the first electron energy level e1 to the first heavy-hole energy level hh1) agrees with the measured pl emission peak position quite well. it is found that qdswell is an alternative structure for realizing lasers with wavelengths beyond 2 mu m at rt. (c) 2011 american institute of physics. [doi:10.1063/1.3583593] |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/21245] |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Kong JX,Zhu QS,Xu B,et al. Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate[J]. journal of applied physics,2011,109(8):article no.84345. |
APA | Kong JX,Zhu QS,Xu B,&Wang ZG.(2011).Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate.journal of applied physics,109(8),article no.84345. |
MLA | Kong JX,et al."Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate".journal of applied physics 109.8(2011):article no.84345. |
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