Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate
Kong JX ; Zhu QS ; Xu B ; Wang ZG
刊名journal of applied physics
2011
卷号109期号:8页码:article no.84345
ISSN号0021-8979
通讯作者kong, jx, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. jxkong@semi.ac.cn
学科主题半导体材料
收录类别SCI
资助信息national research project of china [60990315]
语种英语
公开日期2011-07-05 ; 2011-07-15
附注an inas/in0.73ga0.27as/in0.53ga0.47as/in0.53al0.235ga0.235as quantum dashes-in-a-step-well (qdswell) structure grown via molecular beam epitaxy has been studied. it is observed that the photoluminescence (pl) emission wavelength of such a structure can be as long as 2.12 mu m at room temperature (rt). this is the longest emission wavelength of inas qdashes to be realized at rt. the electron and hole energy levels of the inas/in0.73ga0.27as/in0.53ga0.47as/in0.53al0.235ga0.235as qdswell structure have been calculated using effective-mass envelope-function theory. the calculated transition energy ee1-hh1 (from the first electron energy level e1 to the first heavy-hole energy level hh1) agrees with the measured pl emission peak position quite well. it is found that qdswell is an alternative structure for realizing lasers with wavelengths beyond 2 mu m at rt. (c) 2011 american institute of physics. [doi:10.1063/1.3583593]
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/21245]  
专题半导体研究所_中科院半导体材料科学重点实验室
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GB/T 7714
Kong JX,Zhu QS,Xu B,et al. Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate[J]. journal of applied physics,2011,109(8):article no.84345.
APA Kong JX,Zhu QS,Xu B,&Wang ZG.(2011).Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate.journal of applied physics,109(8),article no.84345.
MLA Kong JX,et al."Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate".journal of applied physics 109.8(2011):article no.84345.
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