An intermediate-band-assisted avalanche multiplication in InAs/InGaAs quantum dots-in-well infrared photodetector

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	An intermediate-band-assisted avalanche multiplication in InAs/InGaAs quantum dots-in-well infrared photodetector
	Lin L ; Zhen HL ; Zhou XH ; Li N ; Lu W ; Liu FQ
刊名	applied physics letters
	2011
卷号	98 期号:7 页码:article no.73504
关键词	DETECTORS RESPONSIVITY
ISSN号	0003-6951
通讯作者	lu, w, chinese acad sci, shanghai inst tech phys, natl lab infrared phys, shanghai 200083, peoples r china. luwei@mail.sitp.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	national basic research program of china [2006cb921507]; national science foundation of china [10990100, 60906058]; shanghai committee of science and technology [08dz1400701, 09dj1400700]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	the avalanche multiplication of photocurrent in inas/ingaas quantum dot infrared photodetectors (qdips) has been observed in the temperature range from 20 to 80 k. the avalanche onset voltage v-th, being larger than 1.2 v at t < 55 k, is reduced to less than 0.8 v at t > 60 k. this singularity of v-th indicates that intermediate-band-assisted avalanche multiplication is achieved in our dots-in-well structure, which benefits from the abrupt change of the electron occupation of the intermediate band at a temperature of approximately 55 k. the remarkable reduction of v-th for qdip is a useful enhancement in the infrared detector's performance. (c) 2011 american institute of physics. [doi:10.1063/1.3554758]
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21311]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Lin L,Zhen HL,Zhou XH,et al. An intermediate-band-assisted avalanche multiplication in InAs/InGaAs quantum dots-in-well infrared photodetector[J]. applied physics letters,2011,98(7):article no.73504.
APA	Lin L,Zhen HL,Zhou XH,Li N,Lu W,&Liu FQ.(2011).An intermediate-band-assisted avalanche multiplication in InAs/InGaAs quantum dots-in-well infrared photodetector.applied physics letters,98(7),article no.73504.
MLA	Lin L,et al."An intermediate-band-assisted avalanche multiplication in InAs/InGaAs quantum dots-in-well infrared photodetector".applied physics letters 98.7(2011):article no.73504.