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科研机构
半导体研究所 [20]
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期刊论文 [18]
会议论文 [2]
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2009 [1]
2008 [1]
2006 [3]
2004 [1]
2003 [3]
2002 [3]
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半导体物理 [20]
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Spin-Hall effect in the generalized honeycomb lattice with Rashba spin-orbit interaction
期刊论文
physics letters a, 2009, 卷号: 373, 期号: 23-24, 页码: 2091-2096
Liu GC
;
Wang ZG
;
Li SS
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  |  
浏览/下载:31/0
  |  
提交时间:2010/03/08
Graphene
Spin-Hall effect
Topology
Monolithic integration of sampled grating DBR with electroabsorption modulator by combining selective-area-growth MOCVD and quantum-well intermixing
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 10, 页码: 3670-3672
Liu, HB
;
Zhao, LJ
;
Pan, JQ
;
Zhu, HL
;
Zhou, F
;
Wang, BJ
;
Wang, W
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  |  
浏览/下载:19/0
  |  
提交时间:2010/03/08
TUNING RANGE
LASERS
TRANSMITTER
PERFORMANCE
MOVPE
Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots
期刊论文
thin solid films, 2006, 卷号: 498, 期号: 1-2, 页码: 188-192
Kong LM
;
Cai JF
;
Wu ZY
;
Gong Z
;
Niu ZC
;
Feng ZC
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  |  
浏览/下载:52/0
  |  
提交时间:2010/04/11
time-resolved photoluminescence
InAs self-assembled QDs
migration of carriers
1.3 MU-M
DEPENDENT RADIATIVE DECAY
THERMAL REDISTRIBUTION
EXCITONS
RECOMBINATION
RELAXATION
LIFETIMES
EMISSION
EPITAXY
LASERS
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy
期刊论文
journal of crystal growth, 2006, 卷号: 288, 期号: 1, 页码: 40529
作者:
Wu DH
;
Niu ZC
;
Jiang DS
;
Xu YQ
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  |  
浏览/下载:81/0
  |  
提交时间:2010/04/11
molecular beam epitaxy
quantum wells
semiconducting III-V materials
MU-M
LASERS
TEMPERATURE
SURFACTANT
NM
Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (1-00) substrates by using MOCVD
期刊论文
chinese physics, 2006, 卷号: 15, 期号: 5, 页码: 1114-1119
作者:
Liang S
;
Pan JQ
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浏览/下载:45/0
  |  
提交时间:2010/04/11
self-assembled quantum dots
indium arsenide
bimodal size distribution
MOCVD
CHEMICAL-VAPOR-DEPOSITION
MU-M
ISLANDS
DENSITY
EPITAXY
LASER
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells
会议论文
international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003
作者:
Zhang YH
;
Jiang DS
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  |  
浏览/下载:10/0
  |  
提交时间:2010/11/15
molecular beam epitaxy
quantum wells
GaAsSb/GaAs
GAAS
LASERS
GAIN
Photoluminescence of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer
期刊论文
chinese physics letters, 2003, 卷号: 20, 期号: 11, 页码: 2061-2063
Fang ZD
;
Gong Z
;
Miao ZH
;
Xu XH
;
Ni HQ
;
Niu ZC
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  |  
浏览/下载:64/0
  |  
提交时间:2010/08/12
1.3 MU-M
MOLECULAR-BEAM EPITAXY
TEMPERATURE-DEPENDENCE
LASING CHARACTERISTICS
LASERS
WAVELENGTH
SEPARATION
LINEWIDTH
PROPERTY
GAIN
Size evolution and optical properties of self-assembled InAs quantum dots on different matrix
期刊论文
physica e-low-dimensional systems & nanostructures, 2003, 卷号: 19, 期号: 3, 页码: 292-297
作者:
Xu B
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  |  
浏览/下载:57/0
  |  
提交时间:2010/08/12
self-assembled
MBE
quantum dots
photoluminescence
1.3 MU-M
TEMPERATURE-DEPENDENCE
EXCITED-STATES
INXGA1-XAS
LASERS
INP
Structure and photoluminescence study of InGaAs/GaAs quantum dots grown via cycled (InAs)(n)/(GaAs)(n) monolayer deposition
期刊论文
japanese journal of applied physics part 1-regular papers short notes & review papers, 2003, 卷号: 42, 期号: 3, 页码: 1154-1157
He J
;
Wang XD
;
Xu B
;
Wang ZG
;
Qu SC
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  |  
浏览/下载:34/0
  |  
提交时间:2010/08/12
MBE
InGaAs/GaAs
quantum dots
photoluminescence
morphology
MU-M
WELL STRUCTURES
GAAS
LASERS
TEMPERATURE
STATES
INP
Interface-related in-plane optical anisotropy in GaAs/AlxGa1-xAs single-quantum-well structures studied by reflectance difference spectroscopy
期刊论文
physical review b, 2002, 卷号: 66, 期号: 19, 页码: art.no.195321
作者:
Ye XL
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  |  
浏览/下载:64/0
  |  
提交时间:2010/08/12
MOLECULAR-BEAM EPITAXY
EXCITON LOCALIZATION
INVERSION ASYMMETRY
COMMON-ATOM
LIGHT-HOLE
HETEROSTRUCTURES
SUPERLATTICES
POLARIZATION
SEGREGATION
MORPHOLOGY
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