Size evolution and optical properties of self-assembled InAs quantum dots on different matrix
Xu B
刊名physica e-low-dimensional systems & nanostructures
2003
卷号19期号:3页码:292-297
关键词self-assembled MBE quantum dots photoluminescence 1.3 MU-M TEMPERATURE-DEPENDENCE EXCITED-STATES INXGA1-XAS LASERS INP
ISSN号1386-9477
通讯作者he j,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要inas quantum dots have been grown by solid source molecular beam epitaxy on different matrix to investigate the effect on the structure and optical properties. high density of 1.02 x 10(11) cm(-2) of inas islands on in0.15ga0.85as and in0.15al0.85as underlying layer has been achieved. atomic force microscopy and photoluminescence spectra show the size evolution of inas islands on in0.15ga0.85as underlying layer. a strong 1.3 mum photoluminescence from inas islands on in0.15ga0.85as underlying layer and with ingaas strain-reduced layer has been obtained. single-mirror light emitting diode structures with inas quantum dots capped by ingaas grown on ingaas layer as active layer were fabricated and the corresponding radiative efficiency was deduced to be as high as 20.5%. our results provide important information for optimizing the epitaxial structures of 1.3 mum wavelength quantum dots devices. (c) 2003 elsevier b.v. all rights reserved.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/11438]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Xu B. Size evolution and optical properties of self-assembled InAs quantum dots on different matrix[J]. physica e-low-dimensional systems & nanostructures,2003,19(3):292-297.
APA Xu B.(2003).Size evolution and optical properties of self-assembled InAs quantum dots on different matrix.physica e-low-dimensional systems & nanostructures,19(3),292-297.
MLA Xu B."Size evolution and optical properties of self-assembled InAs quantum dots on different matrix".physica e-low-dimensional systems & nanostructures 19.3(2003):292-297.
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