Photoluminescence of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer

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	Photoluminescence of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer
	Fang ZD ; Gong Z ; Miao ZH ; Xu XH ; Ni HQ ; Niu ZC
刊名	chinese physics letters
	2003
卷号	20 期号:11 页码:2061-2063
关键词	1.3 MU-M MOLECULAR-BEAM EPITAXY TEMPERATURE-DEPENDENCE LASING CHARACTERISTICS LASERS WAVELENGTH SEPARATION LINEWIDTH PROPERTY GAIN
ISSN号	0256-307x
通讯作者	fang zd,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china.
中文摘要	self-assembled inas/gaas quantum dots covered by the 1-nm inxal(1-x)as (x = 0.2,0.3) and 3-nm in0.2ga0.8as combination strain-reducing layer are fabricated, whose height can take up to 30-46 nm. the luminescence emission at a long-wavelength of 1.33 mum and the energy separation between the ground and the first-excited state of 86 mev are observed at room temperature. furthermore, comparative study proves that the energy separation can increase to 91 mev by multiple stacking.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11400]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Fang ZD,Gong Z,Miao ZH,et al. Photoluminescence of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer[J]. chinese physics letters,2003,20(11):2061-2063.
APA	Fang ZD,Gong Z,Miao ZH,Xu XH,Ni HQ,&Niu ZC.(2003).Photoluminescence of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer.chinese physics letters,20(11),2061-2063.
MLA	Fang ZD,et al."Photoluminescence of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer".chinese physics letters 20.11(2003):2061-2063.