×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
半导体研究所 [14]
内容类型
期刊论文 [14]
发表日期
2011 [1]
2010 [1]
2007 [1]
2006 [1]
2005 [2]
2001 [1]
更多...
学科主题
半导体材料 [14]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共14条,第1-10条
帮助
限定条件
学科主题:半导体材料
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
发表日期升序
发表日期降序
提交时间升序
提交时间降序
题名升序
题名降序
作者升序
作者降序
One-pot synthesis, optical property and self-assembly of monodisperse silver nanospheres
期刊论文
journal of solid state chemistry, 2011, 卷号: 184, 期号: 8, 页码: 1956-1962
Tang AW
;
Qu SC
;
Hou YB
;
Teng F
;
Wang YS
;
Wang ZG
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2011/09/14
LIGHT-EMITTING-DIODES
NANOCRYSTAL SUPERLATTICES
GOLD NANOPARTICLES
AG NANOPARTICLES
ORGANIZATION
MONOLAYERS
NANODISKS
NANORODS
2D
Homogeneous Epitaxial Growth of N,N '-di(n-butyl)quinacridone Thin Films on Ag(110)
期刊论文
journal of nanoscience and nanotechnology, 2010, 卷号: 10, 期号: 11 sp. iss. si, 页码: 7162-7166
Lin F (Lin Feng)
;
Fang ZY (Fang Zheyu)
;
Qu SC (Qu Shengchun)
;
Huang S (Huang Shan)
;
Song WT (Song Wentao)
;
Chi LF (Chi Lifeng)
;
Zhu X (Zhu Xing)
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2010/11/30
MOLECULAR-BEAM DEPOSITION
QUASIEPITAXIAL GROWTH
ORGANIC FILMS
LEED
PTCDA
STM
MONOLAYERS
GRAPHITE
Influence of InAs deposition. thickness on the structural and optical properties of InAs quantum wires
期刊论文
journal of university of science and technology beijing, 2007, 卷号: 14, 期号: 4, 页码: 341-344
Wang YL (Wang Yuanli)
;
Cui H (Cui Hua)
;
Lei W (Lei Wen)
;
Su YH (Su Yahong)
;
Chen YH (Chen Yonghai)
;
Wu J (Wu Ju)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2010/03/29
quantum wire
Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature
期刊论文
chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338
作者:
Zhang Y
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2010/04/11
resonant tunnelling diode
InP substrate
molecular beam epitaxy
high resolution transmission electron microscope
CURRENT-VOLTAGE CHARACTERISTICS
INTRINSIC BISTABILITY
CIRCUIT
A model for scattering due to interface roughness in finite quantum wells
期刊论文
semiconductor science and technology, 2005, 卷号: 20, 期号: 12, 页码: 1207-1212
作者:
Han XX
收藏
  |  
浏览/下载:58/0
  |  
提交时间:2010/04/11
SINGLE-PARTICLE
ELECTRON-GAS
MOBILITY
GAAS
DISORDER
Experiments and their analysis for self-assembly growth of GaN quantum dots via MOCVD
期刊论文
rare metal materials and engineering, 2005, 卷号: 34, 期号: 12, 页码: 1849-1853
Meng T
;
Zhu XF
;
Wang ZG
收藏
  |  
浏览/下载:306/9
  |  
提交时间:2010/04/11
GaN based quantum dots
self-assembly
S-K mode
MOCVD
CHEMICAL-VAPOR-DEPOSITION
STRANSKI-KRASTANOV GROWTH
OPTICAL-PROPERTIES
ALGAN SURFACES
Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands
期刊论文
journal of crystal growth, 2001, 卷号: 223, 期号: 3, 页码: 363-368
Wang XD
;
Niu ZC
;
Feng SL
;
Miao ZH
收藏
  |  
浏览/下载:93/3
  |  
提交时间:2010/08/12
atomic force microscopy
low dimensional structures
optical microscopy
molecular beam epitaxy
nanomaterials
semiconducting III-V materials
laser diodes
TEMPERATURE-DEPENDENCE
M PHOTOLUMINESCENCE
INGAAS OVERGROWTH
GAAS
DOTS
EMISSION
ENERGY
LASER
Growth and characterization of strained superlattices delta-GaNxAs1-x/GaAs by molecular beam epitaxy
期刊论文
journal of crystal growth, 2000, 卷号: 209, 期号: 4, 页码: 648-652
Pan Z
;
Li LH
;
Lin YW
;
Zhou ZQ
;
Zhang W
;
Wang YT
;
Wu RH
收藏
  |  
浏览/下载:60/0
  |  
提交时间:2010/08/12
GaNAs/GaAs superlattice
X-ray diffraction
periodicity fluctuation
MBE
RHEED
BAND-GAP ENERGY
NITROGEN
ALLOYS
DIFFRACTION
COEFFICIENT
SOLUBILITY
OPERATION
GAAS1-XNX
GAASN
Size quantization effects in InAs self-assembled islands on InP(001) at the onset of 2D-to-3D transition
期刊论文
journal of crystal growth, 1999, 卷号: 197, 期号: 4, 页码: 789-793
作者:
Xu B
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2010/08/12
self-assembled island
size quantization effect
molecular beam epitaxy
EXCITED-STATES
GROWTH
PHOTOLUMINESCENCE
QUANTUM DOTS
Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(311)B surfaces
期刊论文
journal of crystal growth, 1999, 卷号: 205, 期号: 4, 页码: 481-488
作者:
Xu B
收藏
  |  
浏览/下载:59/0
  |  
提交时间:2010/08/12
two-dimensional (2D) ordering
quantum dot array
InxGa1-xAs
self-assembly
molecular beam epitaxy
GaAs(311)B
high-index
CHEMICAL-VAPOR-DEPOSITION
ORGANIZED GROWTH
INAS ISLANDS
GAAS
GAAS(100)
ALIGNMENT
MATRIX
ARRAYS
DISKS
MOLECULAR-BEAM-EPITAXY
©版权所有 ©2017 CSpace - Powered by
CSpace