Homogeneous Epitaxial Growth of N,N '-di(n-butyl)quinacridone Thin Films on Ag(110)
Lin F (Lin Feng) ; Fang ZY (Fang Zheyu) ; Qu SC (Qu Shengchun) ; Huang S (Huang Shan) ; Song WT (Song Wentao) ; Chi LF (Chi Lifeng) ; Zhu X (Zhu Xing)
刊名journal of nanoscience and nanotechnology
2010
卷号10期号:11 sp. iss. si页码:7162-7166
关键词MOLECULAR-BEAM DEPOSITION QUASIEPITAXIAL GROWTH ORGANIC FILMS LEED PTCDA STM MONOLAYERS GRAPHITE
通讯作者chi, lf, univ munster, inst phys, d-48149 munster, germany
合作状况国际
英文摘要the structural evolution of the ordered n-n' dibutyl-substituted quinacridone (qa4c) multilayers (3 mls) has been monitored in situ and in real time at various substrate temperatures using low energy electron diffraction (leed) during organic molecular beam epitaxy (mbe). experimental results of leed patterns clearly reveal that the structure of the multilayer strongly depends on the substrate temperature. multilayer growth can be achieved at the substrate temperatures below 300 k, while at the higher temperatures we can only get one ordered monolayer of qa4c. two kinds of structures, the commensurate and incommensurate one, often coexist in the qa4c multilayer. with a method of the two-step substrate temperatures, the incommensurate one can be suppressed, and the commensurate, on the other hand, more similar to the (001) plane of the qa4c bulk crystal, prevails with the layer of qa4c increasing to 3 mls. the two structures in the multilayers are compressed slightly in comparison to the original ones in the first monolayer.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-11-30t05:38:04z no. of bitstreams: 1 homogeneous epitaxial growth of n,n '-di(n-butyl)quinacridone thin films on ag(110).pdf: 1212648 bytes, checksum: 5c87cf1f551a0c9245c7e8e93c82db01 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-11-30t05:42:54z (gmt) no. of bitstreams: 1 homogeneous epitaxial growth of n,n '-di(n-butyl)quinacridone thin films on ag(110).pdf: 1212648 bytes, checksum: 5c87cf1f551a0c9245c7e8e93c82db01 (md5); made available in dspace on 2010-11-30t05:42:54z (gmt). no. of bitstreams: 1 homogeneous epitaxial growth of n,n '-di(n-butyl)quinacridone thin films on ag(110).pdf: 1212648 bytes, checksum: 5c87cf1f551a0c9245c7e8e93c82db01 (md5) previous issue date: 2010; 国际
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-11-30
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/20649]  
专题半导体研究所_中科院半导体材料科学重点实验室
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GB/T 7714
Lin F ,Fang ZY ,Qu SC ,et al. Homogeneous Epitaxial Growth of N,N '-di(n-butyl)quinacridone Thin Films on Ag(110)[J]. journal of nanoscience and nanotechnology,2010,10(11 sp. iss. si):7162-7166.
APA Lin F .,Fang ZY .,Qu SC .,Huang S .,Song WT .,...&Zhu X .(2010).Homogeneous Epitaxial Growth of N,N '-di(n-butyl)quinacridone Thin Films on Ag(110).journal of nanoscience and nanotechnology,10(11 sp. iss. si),7162-7166.
MLA Lin F ,et al."Homogeneous Epitaxial Growth of N,N '-di(n-butyl)quinacridone Thin Films on Ag(110)".journal of nanoscience and nanotechnology 10.11 sp. iss. si(2010):7162-7166.
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