Experiments and their analysis for self-assembly growth of GaN quantum dots via MOCVD

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	Experiments and their analysis for self-assembly growth of GaN quantum dots via MOCVD
	Meng T ; Zhu XF ; Wang ZG
刊名	rare metal materials and engineering
	2005
卷号	34 期号:12 页码:1849-1853
关键词	GaN based quantum dots self-assembly S-K mode MOCVD CHEMICAL-VAPOR-DEPOSITION STRANSKI-KRASTANOV GROWTH OPTICAL-PROPERTIES ALGAN SURFACES
ISSN号	1002-185x
通讯作者	meng, t, xiamen univ, dept phys, lab low dimens nanostruct, xiamen 361005, peoples r china. e-mail: mtao@sina.com
中文摘要	in recent years, growth of gan-based materials-related quantum dots has become a hot topic in semiconductor materials research. considerable efforts have been devoted to growth of self-assembled quantum dots of gan-based materials via mocvd (metal organic chemical vapor deposition) and there are a lot of relevant literatures. there is, however, few review papers for the topic. in this paper, different experimental methods for fabrication of quantum dots of gan-based materials via mocvd are critically reviewed and the experimental conditions and parameters, which may affect growth of the quantum dots, are analyzed, with an aim at providing some critical reference for the related future experiment research.
学科主题	半导体材料
收录类别	SCI
语种	中文
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10888]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Meng T,Zhu XF,Wang ZG. Experiments and their analysis for self-assembly growth of GaN quantum dots via MOCVD[J]. rare metal materials and engineering,2005,34(12):1849-1853.
APA	Meng T,Zhu XF,&Wang ZG.(2005).Experiments and their analysis for self-assembly growth of GaN quantum dots via MOCVD.rare metal materials and engineering,34(12),1849-1853.
MLA	Meng T,et al."Experiments and their analysis for self-assembly growth of GaN quantum dots via MOCVD".rare metal materials and engineering 34.12(2005):1849-1853.