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Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 068103
作者:  Su SJ
收藏  |  浏览/下载:93/5  |  提交时间:2011/07/07
Strained and strain-relaxed epitaxial Ge(1-x)Sn(x) alloys on Si(100) substrates 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: 68103
Wang, W; Su, SJ; Zheng, J; Zhang, GZ; Zuo, YH; Cheng, BW; Wang, QM
收藏  |  浏览/下载:17/0  |  提交时间:2012/02/06
Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038504
Zhu B (Zhu Bin); Han Q (Han Qin); Yang XH (Yang Xiao-Hong); Ni HQ (Ni Hai-Qiao); He JF (He Ji-Fang); Niu ZC (Niu Zhi-Chuan); Wang X (Wang Xin); Wang XP (Wang Xiu-Ping); Wang J (Wang Jie)
收藏  |  浏览/下载:123/5  |  提交时间:2010/04/22
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801
Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui)
收藏  |  浏览/下载:127/4  |  提交时间:2010/04/13
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802
Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long)
收藏  |  浏览/下载:73/2  |  提交时间:2010/05/24
Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 7, 页码: art. no. 076804
Guo X (Guo Xi); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Qiu YX (Qiu Yong-Xin); Xu K (Xu Ke); Yang H (Yang Hui)
收藏  |  浏览/下载:63/0  |  提交时间:2010/08/17
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文
journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464
作者:  Wang YT;  Zhao DG;  Zhang SM;  Yang H;  Jiang DS
收藏  |  浏览/下载:146/11  |  提交时间:2010/04/04
Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 14, 页码: art. no. 145410
作者:  Zhang SM;  Yang H;  Yang H;  Wang YT;  Zhu JJ
收藏  |  浏览/下载:72/0  |  提交时间:2010/03/08
Investigation on the structural origin of n-type conductivity in InN films 期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: art. no. 135403
Wang, H; Jiang, DS; Wang, LL; Sun, X; Liu, WB; Zhao, DG; Zhu, JJ; Liu, ZS; Wang, YT; Zhang, SM; Yang, H
收藏  |  浏览/下载:53/1  |  提交时间:2010/03/08
The effect of growth temperature on structural quality of GaN/AlN quantum wells by metal-organic chemical vapour deposition 期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 10, 页码: art. no. 105106
Ma, ZF; Zhao, DG; Wang, YT; Jiang, DS; Zhang, SM; Zhu, JJ; Liu, ZS; Sun, BJ; Yang, H; Liang, JW
收藏  |  浏览/下载:51/3  |  提交时间:2010/03/08


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