An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells

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	An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells
	Wang YT; Zhao DG; Zhang SM; Yang H; Jiang DS; Yang H; Wang H; Wang H; Zhu JJ
刊名	journal of alloys and compounds
	2010
卷号	489 期号:2 页码:461-464
关键词	Nitride materials Crystal growth X-ray diffraction TIME-RESOLVED PHOTOLUMINESCENCE LIGHT-EMITTING-DIODES PIEZOELECTRIC FIELDS LASER-DIODES DEPENDENCE RECOMBINATION POLARIZATION DYNAMICS GROWTH MOCVD
通讯作者	zhao, dg, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. e-mail address: dgzhao@red.semi.ac.cn
合作状况	国内
英文摘要	the influence of well thickness on the electroluminescence (el) of ingan/gan multiple quantum wells (mqws) grown by metalorganic chemical vapor deposition is investigated. it is found that the peak wavelength of el increases with the increase of well thickness when the latter is located in the range of 3.0-5.1 nm. the redshift is mainly attributed to the quantum confined stark effect (qcse). as a contrast, it is found that the el intensity of ingan/gan mqws increases with the increase of well thickness in spite of qcse. the result of x-ray diffraction demonstrates that the interface become smoother with the increase of well thickness and suggests that the reduced interface roughness can be an important factor leading to the increase of el intensity of ingan/gan mqws. (c) 2009 elsevier b.v. all rights reserved.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-04t15:06:12z no. of bitstreams: 1 66.pdf: 428879 bytes, checksum: 83963036dacc1432dbc954aade0d17fd (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-04t15:33:44z (gmt) no. of bitstreams: 1 66.pdf: 428879 bytes, checksum: 83963036dacc1432dbc954aade0d17fd (md5); made available in dspace on 2010-04-04t15:33:44z (gmt). no. of bitstreams: 1 66.pdf: 428879 bytes, checksum: 83963036dacc1432dbc954aade0d17fd (md5) previous issue date: 2010; national natural science foundation of china 60836003 60776047 60506001 60476021 60576003; national science fund for distinguished young scholars 60925017; national basic research program of china 2007cb936700; national high technology research and development program of china 2007aa03z401; 国内
学科主题	光电子学
收录类别	SCI
资助信息	national natural science foundation of china 60836003 60776047 60506001 60476021 60576003; national science fund for distinguished young scholars 60925017; national basic research program of china 2007cb936700; national high technology research and development program of china 2007aa03z401
语种	英语
公开日期	2010-04-04 ; 2010-10-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10205]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Wang YT,Zhao DG,Zhang SM,et al. An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells[J]. journal of alloys and compounds,2010,489(2):461-464.
APA	Wang YT.,Zhao DG.,Zhang SM.,Yang H.,Jiang DS.,...&Zhu JJ.(2010).An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells.journal of alloys and compounds,489(2),461-464.
MLA	Wang YT,et al."An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells".journal of alloys and compounds 489.2(2010):461-464.