Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

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	Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors
	Zhao DG (Zhao De-Gang) ; Zhang S (Zhang Shuang) ; Liu WB (Liu Wen-Bao) ; Hao XP (Hao Xiao-Peng) ; Jiang DS (Jiang De-Sheng) ; Zhu JJ (Zhu Jian-Jun) ; Liu ZS (Liu Zong-Shun) ; Wang H (Wang Hui) ; Zhang SM (Zhang Shu-Ming) ; Yang H (Yang Hui) ; Wei L (Wei Long)
刊名	chinese physics b
	2010
卷号	19 期号:5 页码:art. no. 057802
关键词	Ga vacancies MOCVD GaN Schottky barrier photodetector REVERSE-BIAS LEAKAGE MOLECULAR-BEAM EPITAXY P-N-JUNCTIONS POSITRON-ANNIHILATION DIODES FILMS
通讯作者	zhao, dg, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: dgzhao@red.semi.ac.cn
合作状况	其它
英文摘要	the leakage current of gan schottky barrier ultraviolet photodetectors is investigated. it is found that the photodetectors adopting undoped gan instead of lightly si-doped gan as an active layer show a much lower leakage current even when they have a higher dislocation density. it is also found that the density of ga vacancies in undoped gan is much lower than in si-doped gan. the ga vacancies may enhance tunneling and reduce effective schottky barrier height, leading to an increase of leakage current. it suggests that when undoped gan is used as the active layer, it is necessary to reduce the leakage current of gan schottky barrier ultraviolet photodetector.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-05-24t06:54:37z no. of bitstreams: 1 role of ga vacancies in enhancing the leakage current of gan schottky barrier ultraviolet photodetectors .pdf: 345007 bytes, checksum: eb2ab6c5aeeea8869ccb5bf2c90d7a43 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-05-24t07:17:11z (gmt) no. of bitstreams: 1 role of ga vacancies in enhancing the leakage current of gan schottky barrier ultraviolet photodetectors .pdf: 345007 bytes, checksum: eb2ab6c5aeeea8869ccb5bf2c90d7a43 (md5); made available in dspace on 2010-05-24t07:17:11z (gmt). no. of bitstreams: 1 role of ga vacancies in enhancing the leakage current of gan schottky barrier ultraviolet photodetectors .pdf: 345007 bytes, checksum: eb2ab6c5aeeea8869ccb5bf2c90d7a43 (md5) previous issue date: 2010; national science fund for distinguished young scholars 60925017 national natural science foundation of china 60836003 60776047 national basic research program of china 2007cb936700 national high technology research and development program of china 2007aa03z401; 其它
学科主题	光电子学
收录类别	SCI
资助信息	national science fund for distinguished young scholars 60925017 national natural science foundation of china 60836003 60776047 national basic research program of china 2007cb936700 national high technology research and development program of china 2007aa03z401
语种	英语
公开日期	2010-05-24 ; 2010-10-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11240]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Zhao DG ,Zhang S ,Liu WB ,et al. Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors[J]. chinese physics b,2010,19(5):art. no. 057802.
APA	Zhao DG .,Zhang S .,Liu WB .,Hao XP .,Jiang DS .,...&Wei L .(2010).Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors.chinese physics b,19(5),art. no. 057802.
MLA	Zhao DG ,et al."Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors".chinese physics b 19.5(2010):art. no. 057802.