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| Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition 期刊论文 rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251 作者: Li GK 收藏  |  浏览/下载:74/2  |  提交时间:2011/07/05
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| Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions 期刊论文 applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 1, 页码: 429-432 作者: Zhang ML 收藏  |  浏览/下载:65/4  |  提交时间:2011/07/07
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| Strong room-temperature ferromagnetism in Cu-implanted nonpolar GaN films 期刊论文 journal of applied physics, 2009, 卷号: 106, 期号: 11, 页码: art. no. 113921 Sun LL; Yan FW; Zhang HX; Wang JX; Zeng YP; Wang GH; Li JM 收藏  |  浏览/下载:99/0  |  提交时间:2010/04/03
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| ZnO thin films on Si(111) grown by pulsed laser deposition from metallic Zn target 期刊论文 applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 841-845 Zhao J (Zhao Jie); Hu LZ (Hu Lizhong); Wang ZY (Wang Zhaoyang); Sun J (Sun Jie); Wang ZJ (Wang Zhijun) 收藏  |  浏览/下载:24/0  |  提交时间:2010/04/11
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| Photoluminescence from C+ ion-implanted and electrochemical etched Si layers 期刊论文 applied surface science, 2006, 卷号: 252, 期号: 24, 页码: 8424-8427 Shi LW (Shi Liwei); Wang Q (Wang Qiang); Li YG (Li Yuguo); Xue CS (Xue Chengshan); Zhuang HZ (Zhuang Huizhao) 收藏  |  浏览/下载:34/0  |  提交时间:2010/04/11
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| Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness 期刊论文 journal of crystal growth, 2005, 卷号: 284, 期号: 1-2, 页码: 20-27 作者: Ye XL; Xu B 收藏  |  浏览/下载:67/18  |  提交时间:2010/03/17
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| Amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma 期刊论文 journal of crystal growth, 2004, 卷号: 264, 期号: 1-3, 页码: 7-12 Hu ZH; Liao XB; Diao HW; Kong GL; Zeng XB; Xu YY 收藏  |  浏览/下载:32/3  |  提交时间:2010/03/09
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| Annealing and activation of silicon implanted in semi-insulating InP substrates 期刊论文 materials science in semiconductor processing, 2003, 卷号: 6, 期号: 4, 页码: 215-218 Dong HW; Zhao YW; Li JM 收藏  |  浏览/下载:47/0  |  提交时间:2010/08/12
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| Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances 期刊论文 journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7 Dong ZY; Zhao YW; Zeng YP; Duan ML; Sun WR; Jiao JH; Lin LY 收藏  |  浏览/下载:351/16  |  提交时间:2010/08/12
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| Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient 会议论文 iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002 Wang QY; Wang JH; Deng HF; Lin LY 收藏  |  浏览/下载:17/0  |  提交时间:2010/11/15
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