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| VLS growth of SiOx nanowires with a stepwise nonuniformity in diameter 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.84328
Huang SL; Wu Y; Zhu XF; Li LX; Wang ZG; Wang LZ; Lu GQ
  收藏 | 浏览/下载：29/0 | 提交时间：2011/07/05
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| Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93708
作者: Zhang XW
收藏 | 浏览/下载：47/3 | 提交时间：2011/07/05
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| The effects of substrate temperature on the properties of diphasic nanocrystalline silicon thin films 期刊论文
optoelectronics and advanced materials-rapid communications, 2011, 卷号: 5, 期号: 40545, 页码: 112-115
Hao HY; Xing J; Li WM; Zeng XB; Kong GL; Liao XB
收藏 | 浏览/下载：81/3 | 提交时间：2011/07/06
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| Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.83501
作者: Zhou GY; Zhang HY; Xu B; Ye XL
收藏 | 浏览/下载：67/4 | 提交时间：2011/07/05
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| Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716
作者: Yin ZG; Zhang XW; Tan HR; Fan YM; Zhang SG
收藏 | 浏览/下载：41/3 | 提交时间：2011/07/05
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| Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition 期刊论文
rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251
作者: Li GK
收藏 | 浏览/下载：74/2 | 提交时间：2011/07/05
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| Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者: Pan X
收藏 | 浏览/下载：20/0 | 提交时间：2011/09/14
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| Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者: Pan X
收藏 | 浏览/下载：81/5 | 提交时间：2011/07/05
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| Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 6, 页码: article no.68502
Wu M; Zeng YP; Wang JX; Hu Q
收藏 | 浏览/下载：49/2 | 提交时间：2011/07/05
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| Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density 期刊论文
journal of physics d-applied physics, 2010, 卷号: 43, 期号: 48, 页码: art. no. 485102
Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Jia CH (Jia C. H.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.)
收藏 | 浏览/下载：17/0 | 提交时间：2010/12/12
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