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科研机构
半导体研究所 [20]
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期刊论文 [18]
会议论文 [2]
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2011 [1]
2010 [1]
2009 [4]
2008 [2]
2007 [1]
2006 [4]
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半导体物理 [20]
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Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43004
He, Jifang
;
Shang, Xiangjun
;
Li, Mifeng
;
Zhu, Yan
;
Chang, Xiuying
;
Ni, Haiqiao
;
Xu, Yingqiang
;
Niu, Zhichuan
收藏
  |  
浏览/下载:73/0
  |  
提交时间:2012/06/14
Atomic force microscopy
Buffer layers
Epitaxial growth
Gallium alloys
Gallium arsenide
Germanium
Growth temperature
High resolution transmission electron microscopy
Molecular beam epitaxy
Molecular beams
Semiconducting gallium
Semiconductor device structures
Semiconductor quantum wells
Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device
期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: article no.262102
Wang KY
;
Edmonds KW
;
Irvine AC
;
Tatara G
;
De Ranieri E
;
Wunderlich J
;
Olejnik K
;
Rushforth AW
;
Campion RP
;
Williams DA
;
Foxon CT
;
Gallagher BL
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  |  
浏览/下载:46/2
  |  
提交时间:2011/07/05
MN)AS
(GA
GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy
期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 6, 页码: art. no. 067801
作者:
Xu YQ
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  |  
浏览/下载:25/0
  |  
提交时间:2010/03/08
MU-M
LASER
ISLANDS
Comparison of short period InAs/GaSb superlattices on GaSb and GaAs substrates
期刊论文
science in china series e-technological sciences, 2009, 卷号: 52, 期号: 1, 页码: 23-27
作者:
Xu YQ
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  |  
浏览/下载:209/35
  |  
提交时间:2010/03/08
InAs/GaSb
superlattice
substrates
infrared detector
GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy
期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 2, 页码: art. no. 028102
作者:
Tang B
;
Wang GW
;
Xu YQ
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浏览/下载:159/45
  |  
提交时间:2010/03/08
INAS/GA1-XINXSB SUPERLATTICE
GASB
HETEROJUNCTIONS
PHOTODIODES
SEGREGATION
LAYERS
INAS
ALSB
Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers
期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 018101
作者:
Xu YQ
;
Tang B
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浏览/下载:221/40
  |  
提交时间:2010/03/08
SURFACE-MORPHOLOGY
GROWTH
SUPERLATTICES
HETEROSTRUCTURES
TEMPERATURE
DETECTORS
GAAS(100)
FILMS
INAS
INSB
Stress analysis of ZnO film with a GaN buffer layer on sapphire substrate
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 6, 页码: 2277-2280
Cui, JP
;
Wang, XF
;
Duan, Y
;
He, JX
;
Zeng, YP
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  |  
浏览/下载:61/0
  |  
提交时间:2010/03/08
THIN-FILMS
BULK ZNO
SCATTERING
PRESSURE
Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 11, 页码: 4097-4100
Lin, GQ
;
Zeng, YP
;
Wang, XL
;
Liu, HX
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  |  
浏览/下载:18/0
  |  
提交时间:2010/03/08
RHEED
INTERLAYER
PRESSURE
NITRIDES
LAYERS
MBE
MBE growth of very short period InAs/GaSb type-II superlattices on (001) GaAs substrates
期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 21, 页码: 6690-6693
Hao RT (Hao Ruiting)
;
Xu YQ (Xu Yingqiang)
;
Zhou ZQ (Zhou Zhiqiang)
;
Ren ZW (Ren Zhengwei)
;
Ni HQ (Ni Haiqiao)
;
He ZH (He Zhenhong)
;
Niu ZC (Niu Zhichuan)
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  |  
浏览/下载:23/0
  |  
提交时间:2010/03/29
MOLECULAR-BEAM EPITAXY
Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers
会议论文
2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004
Fang, ZD (Fang, Zhidan)
;
Gong, M (Gong, Meng)
;
Miao, ZH (Miao, Zhenhua)
;
Niu, ZC (Niu, Zhichuan)
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  |  
浏览/下载:113/32
  |  
提交时间:2010/03/29
quantum dots
photoluminescence
combination layer
1.3 MU-M
LASERS
INALAS
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