Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device

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	Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device
	Wang KY ; Edmonds KW ; Irvine AC ; Tatara G ; De Ranieri E ; Wunderlich J ; Olejnik K ; Rushforth AW ; Campion RP ; Williams DA ; Foxon CT ; Gallagher BL
刊名	applied physics letters
	2010
卷号	97 期号:26 页码:article no.262102
关键词	MN)AS (GA
ISSN号	0003-6951
通讯作者	wang, ky, cas, inst semicond, sklsm, pob 912, beijing 100083, peoples r china. kywang@semi.ac.cn
学科主题	半导体物理
收录类别	SCI
资助信息	eu [ist-015728, 214499]; epsrc-uk [ep/h002294/01]; epsrc-nsfc [10911130232/a0402]; chinese academy of sciences ; kurata memorial hitachi science and technology foundation ; sumitomo foundation ; epsrc [ep/h003487/1]; [1948027]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (ga,mn)(as,p) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10(5) a cm(-2). this is enabled by a much weaker domain wall pinning compared to (ga,mn)as layers grown on a strain-relaxed buffer layer. the critical current is shown to be comparable with theoretical predictions. the wide temperature range over which domain wall motion can be achieved indicates that this is a promising system for developing an improved understanding of spin-transfer torque in systems with strong spin-orbit interaction. (c) 2010 american institute of physics. [doi:10.1063/1.3532095]
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20929]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Wang KY,Edmonds KW,Irvine AC,et al. Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device[J]. applied physics letters,2010,97(26):article no.262102.
APA	Wang KY.,Edmonds KW.,Irvine AC.,Tatara G.,De Ranieri E.,...&Gallagher BL.(2010).Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device.applied physics letters,97(26),article no.262102.
MLA	Wang KY,et al."Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device".applied physics letters 97.26(2010):article no.262102.