GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy

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	GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy
	Tang B; Wang GW; Xu YQ
刊名	chinese physics letters
	2009
卷号	26 期号:2 页码:art. no. 028102
关键词	INAS/GA1-XINXSB SUPERLATTICE GASB HETEROJUNCTIONS PHOTODIODES SEGREGATION LAYERS INAS ALSB
ISSN号	0256-307x
通讯作者	xu yq chinese acad sci inst semicond state key lab superlattices & microstruct beijing 100083 peoples r china. e-mail address: yingqxu@semi.ac.cn
中文摘要	inas/gasb superlattice (sl) short wavelength infrared photoconduction detectors are grown by molecular beam epitaxy on gaas(001) semi-insulating substrates. an interfacial misfit mode alsb quantum dot layer and a thick gasb layer are grown as buffer layers. the detectors containing a 200-period 2ml/8ml inas/gasb sl active layer are fabricated with a pixel area of 800 x 800 mu m(2) without using passivation or antireflection coatings. corresponding to the 50% cutoff wavelengths of 2.05 mu m at 77k and 2.25 mu m at 300 k, the peak detectivities of the detectors are 4 x 10(9) cm.hz(1/2)/w at 77k and 2 x 10(8) cm.hz(1/2)/w at 300 k, respectively.
学科主题	半导体物理
收录类别	SCI
资助信息	national natural science foundation of china 60607016 60625405national basic research programme of china 2007cb936304 supported by the national natural science foundation of china under grant nos 60607016 and 60625405, and the national basic research programme of china under grant no 2007cb936304.
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7367]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Tang B,Wang GW,Xu YQ. GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy[J]. chinese physics letters,2009,26(2):art. no. 028102.
APA	Tang B,Wang GW,&Xu YQ.(2009).GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy.chinese physics letters,26(2),art. no. 028102.
MLA	Tang B,et al."GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy".chinese physics letters 26.2(2009):art. no. 028102.