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科研机构
半导体研究所 [30]
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期刊论文 [23]
会议论文 [7]
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2012 [1]
2011 [4]
2010 [3]
2008 [3]
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光电子学 [30]
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Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire
期刊论文
journal of alloys and compounds, 2012, 卷号: 544, 页码: 94-98
Zhao, D.G
;
Jiang, D.S
;
Wu, L.L
;
Le, L.C
;
Li, L
;
Chen, P
;
Liu, Z.S
;
Zhu, J.J
;
Wang, H
;
Zhang, S.M
;
Yang, H
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2013/05/07
Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing
期刊论文
applied surface science, 2011, 卷号: 257, 期号: 9, 页码: 4468-4471
Wang W
;
Su SJ
;
Zheng J
;
Zhang GZ
;
Xue CL
;
Zuo YH
;
Cheng BW
;
Wang QM
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  |  
浏览/下载:97/7
  |  
提交时间:2011/07/05
Germanium tin alloys
Germanium buffer
Surface morphology evolution
Mass transport
SURFACE
GROWTH
EVOLUTION
DECAY
Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates
期刊论文
journal of crystal growth, 2011, 卷号: 317, 期号: 1, 页码: 43-46
Su SJ
;
Wang W
;
Cheng BW
;
Zhang GZ
;
Hu WX
;
Xue CL
;
Zuo YH
;
Wang QM
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  |  
浏览/下载:71/4
  |  
提交时间:2011/07/05
Thermal stability
Molecular beam epitaxy
Germanium tin alloys
Germanium
MOLECULAR-BEAM EPITAXY
LOW-TEMPERATURE
SEMICONDUCTORS
GE(001)2X1
High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate
期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 20, 页码: article no.201104
作者:
Li MF
;
He JF
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  |  
浏览/下载:35/3
  |  
提交时间:2011/07/05
I-N PHOTODIODES
Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy
期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 2, 页码: article no.28101
Su SJ
;
Wang W
;
Zhang GZ
;
Hu WX
;
Bai AQ
;
Xue CL
;
Zuo YH
;
Cheng BW
;
Wang QM
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  |  
浏览/下载:55/3
  |  
提交时间:2011/07/05
GeSn
Ge
molecular beam epitaxy
epitaxial growth
SEMICONDUCTORS
GE(001)2X1
Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs
期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038504
Zhu B (Zhu Bin)
;
Han Q (Han Qin)
;
Yang XH (Yang Xiao-Hong)
;
Ni HQ (Ni Hai-Qiao)
;
He JF (He Ji-Fang)
;
Niu ZC (Niu Zhi-Chuan)
;
Wang X (Wang Xin)
;
Wang XP (Wang Xiu-Ping)
;
Wang J (Wang Jie)
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  |  
浏览/下载:123/5
  |  
提交时间:2010/04/22
MOLECULAR-BEAM EPITAXY
BUFFER LAYERS
DARK CURRENT
PHOTODIODES
LASERS
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer
期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801
Wu YX (Wu Yu-Xin)
;
Zhu JJ (Zhu Jian-Jun)
;
Chen GF (Chen Gui-Feng)
;
Zhang SM (Zhang Shu-Ming)
;
Jiang DS (Jiang De-Sheng)
;
Liu ZS (Liu Zong-Shun)
;
Zhao DG (Zhao De-Gang)
;
Wang H (Wang Hui)
;
Wang YT (Wang Yu-Tian)
;
Yang H (Yang Hui)
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  |  
浏览/下载:127/4
  |  
提交时间:2010/04/13
GaN
Si (111) substrate
metalorganic chemical vapour deposition
AlN buffer layer
AlGaN interlayer
: VAPOR-PHASE EPITAXY
CRACK-FREE GAN
STRESS-CONTROL
SI(111)
DEPOSITION
ALXGA1-XN
FILM
Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition
期刊论文
science china-technological sciences, 2010, 卷号: 53, 期号: 2, 页码: 313-316
Wu CM (Wu ChaoMin)
;
Shang JZ (Shang JingZhi)
;
Zhang BP (Zhang BaoPing)
;
Zhang JY (Zhang JiangYong)
;
Yu JZ (Yu JinZhong)
;
Wang QM (Wang QiMing)
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  |  
浏览/下载:72/2
  |  
提交时间:2010/05/04
MOCVD
DBR
high-reflectivity
nitride
SURFACE-EMITTING LASER
AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Liu, NX
;
Yan, JC
;
Liu, Z
;
Ma, P
;
Wang, JX
;
Li, JM
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  |  
浏览/下载:36/0
  |  
提交时间:2010/03/09
AlGaN
HT-AlGaN buffer
HT-interlayers
ultraviolet (UV) LED
Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer
会议论文
5th ieee international conference on group iv photonics, sorrento, italy, sep 17-19, 2008
作者:
Xue CL
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  |  
浏览/下载:52/0
  |  
提交时间:2010/03/09
SIGE/SI(100) EPITAXIAL-FILMS
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