AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S
	Liu, NX ; Yan, JC ; Liu, Z ; Ma, P ; Wang, JX ; Li, JM
	2008
会议名称	conference on solid state lighting and solar energy technologies
会议日期	nov 12-14, 2007
会议地点	beijing, peoples r china
关键词	AlGaN HT-AlGaN buffer HT-interlayers ultraviolet (UV) LED
页码	6841: s8410-s8410
通讯作者	liu, nx, chinese acad sci, inst semicond, beijing 100083, peoples r china.
中文摘要	we investigated algan layers grown by metalorganic chemical vapor deposition (mocvd) on high temperature (ht-)gan and algan buffer layers. on gan buffer layer, there are a lot of surface cracking because of tensile strain in subsequent algan epilayers. on ht-algan buffer layer, not only cracks but also high densities rounded pits present, which is related to the high density of coalescence boundaries in ht-algan growth process.the insertion of interlayer (il) between algan and the gan pseudosubstrate can not only avoid cracking by modifying the strain status of the epilayer structure, but also improved al incorporation efficiency and lead to phase-separation. and we also found the growth temperature of il is a critical parameter for crystalline quality of subsequent algan epilayer. low temperature (lt-) a1n il lead to a inferior quality in subsequent algan epilayers.
英文摘要	we investigated algan layers grown by metalorganic chemical vapor deposition (mocvd) on high temperature (ht-)gan and algan buffer layers. on gan buffer layer, there are a lot of surface cracking because of tensile strain in subsequent algan epilayers. on ht-algan buffer layer, not only cracks but also high densities rounded pits present, which is related to the high density of coalescence boundaries in ht-algan growth process.the insertion of interlayer (il) between algan and the gan pseudosubstrate can not only avoid cracking by modifying the strain status of the epilayer structure, but also improved al incorporation efficiency and lead to phase-separation. and we also found the growth temperature of il is a critical parameter for crystalline quality of subsequent algan epilayer. low temperature (lt-) a1n il lead to a inferior quality in subsequent algan epilayers.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t02:11:56z (gmt). no. of bitstreams: 1 695.pdf: 379877 bytes, checksum: 4bc01a4bc1d2c986a1e8cb4661c2aff3 (md5) previous issue date: 2008; spie.; chinese opt soc.; [liu, n. x.; yan, j. c.; liu, z.; ma, p.; wang, j. x.; li, j. m.] chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	spie.; chinese opt soc.
会议录	solid state lighting and solar energy technologies
会议录出版者	spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
会议录出版地	1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题	光电子学
语种	英语
ISSN号	0277-786x
ISBN号	978-0-8194-7016-4
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/7830]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu, NX,Yan, JC,Liu, Z,et al. AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S[C]. 见:conference on solid state lighting and solar energy technologies. beijing, peoples r china. nov 12-14, 2007.