High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate | |
Li MF![]() ![]() | |
刊名 | applied physics letters
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2011 | |
卷号 | 98期号:20页码:article no.201104 |
关键词 | I-N PHOTODIODES |
ISSN号 | 0003-6951 |
通讯作者 | liu, sq, chinese acad sci, state key lab integrated optoelect, inst semicond, pob 912, beijing 100083, peoples r china. sqliu@semi.ac.cn ; hanqin@red.semi.ac.cn |
学科主题 | 光电子学 |
收录类别 | SCI |
资助信息 | national natural foundation of china [60876039]; hi-tech research and development program of china (863 program) [2007aa03z421, 2009aa03z404]; national basic research program of china (973 program) [2006cb302802] |
语种 | 英语 |
公开日期 | 2011-07-05 ; 2011-07-15 |
附注 | in this letter, we demonstrated a top illuminated 1.55 mu m metamorphic ingaas resonant-cavity-enhanced p-i-n photodetector grown on gaas substrate. the photodetectors were grown by a solid-source molecular beam epitaxy system. the high quality linearly graded inxal0.4ga1-x-0.4as metamorphic buffer layer enabled photodiodes to achieve ultralow dark current densities of 2.3 x 10(-6) a/cm(2) at 0 v and 4.2 x 10(-5) a/cm(2) at a reverse bias of 5 v. a high quantum efficiency of 84.4% at resonant wavelength of 1542 nm, a full width at half maximum about 14 nm, and a -3 db bandwidth up to 13 ghz were also obtained. (c) 2011 american institute of physics. [doi:10.1063/1.3592569] |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/20951] ![]() |
专题 | 半导体研究所_集成光电子学国家重点实验室 |
推荐引用方式 GB/T 7714 | Li MF,He JF. High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate[J]. applied physics letters,2011,98(20):article no.201104. |
APA | Li MF,&He JF.(2011).High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate.applied physics letters,98(20),article no.201104. |
MLA | Li MF,et al."High-performance metamorphic InGaAs resonant cavity enhanced photodetector grown on GaAs substrate".applied physics letters 98.20(2011):article no.201104. |
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