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CORC

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Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness 期刊论文
journal of applied physics, 2013, 卷号: 114, 期号: 14, 页码: 143706
Le, L. C.; Zhao, D. G.; Jiang, D. S.; Li, L.; Wu, L. L.; Chen, P.; Liu, Z. S.; Yang, J.; Li, X. J.; He, X. G.; Zhu, J. J.; Wang, H.; Zhang, S. M.; Yang, H.
收藏  |  浏览/下载：11/0  |  提交时间：2014/04/09
A theoretical calculation of the impact of gan cap and alxga1-xn barrier thickness fluctuations on two-dimensional electron gas in a gan/alxga1-xn/gan heterostructure 期刊论文
Ieee transactions on electron devices, 2011, 卷号: 58, 期号: 12, 页码: 4272-4275
作者:  Liu, Guipeng;  Wu, Ju;  Lu, Yanwu;  Zhang, Biao;  Li, Chengming
收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12
The influence of the 1st aln and the 2nd gan layers on properties of algan/2nd aln/2nd gan/1st aln/1st gan structure 期刊论文
Applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者:  Bi, Yang;  Wang, XiaoLiang;  Yang, CuiBai;  Xiao, HongLing;  Wang, CuiMei
收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12
The influence of the ingan back-barrier on the properties of al0.3ga0.7n/aln/gan/ingan/gan structure 期刊论文
European physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 5
作者:  Bi, Y.;  Wang, X. L.;  Xiao, H. L.;  Wang, C. M.;  Peng, E. C.
收藏  |  浏览/下载：25/0  |  提交时间：2019/05/12
Growth simulations of self-assembled nanowires on stepped substrates 期刊论文
Ieee journal of selected topics in quantum electronics, 2011, 卷号: 17, 期号: 4, 页码: 960-965
作者:  Liang, Song;  Kong, Duanhua;  Zhu, Hongliang;  Wang, Wei
收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12
Effects of ultra-low al alloying in(al) as layer on the formation and evolution of inas/gaas quantum dots 期刊论文
Journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: 6
作者:  Zhou, X. L.;  Chen, Y. H.;  Li, T. F.;  Zhou, G. Y.;  Zhang, H. Y.
收藏  |  浏览/下载：14/0  |  提交时间：2019/05/12
Improvement of electroluminescent performance of n-zno/aln/p-gan light-emitting diodes by optimizing the aln barrier layer 期刊论文
Journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: 6
作者:  Zhang, S. G.;  Zhang, X. W.;  Yin, Z. G.;  Wang, J. X.;  Dong, J. J.
收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12
Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer 期刊论文
Journal of applied physics, 2011, 卷号: 109, 期号: 6, 页码: 5
作者:  Gu, Yongxian;  Yang, Tao;  Ji, Haiming;  Xu, Pengfei;  Wang, Zhanguo
收藏  |  浏览/下载：13/0  |  提交时间：2019/05/12
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY
收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05
Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93708
作者:  Zhang XW
收藏  |  浏览/下载：47/3  |  提交时间：2011/07/05

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