Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness

	Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness
	Le, L. C. ; Zhao, D. G. ; Jiang, D. S. ; Li, L. ; Wu, L. L. ; Chen, P. ; Liu, Z. S. ; Yang, J. ; Li, X. J. ; He, X. G. ; Zhu, J. J. ; Wang, H. ; Zhang, S. M. ; Yang, H.
刊名	journal of applied physics
	2013
卷号	114 期号:14 页码:143706
学科主题	光电子学
公开日期	2014-04-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24740]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Le, L. C.,Zhao, D. G.,Jiang, D. S.,et al. Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness[J]. journal of applied physics,2013,114(14):143706.
APA	Le, L. C..,Zhao, D. G..,Jiang, D. S..,Li, L..,Wu, L. L..,...&Yang, H..(2013).Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness.journal of applied physics,114(14),143706.
MLA	Le, L. C.,et al."Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness".journal of applied physics 114.14(2013):143706.