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	Improvement of electroluminescent performance of n-zno/aln/p-gan light-emitting diodes by optimizing the aln barrier layer
	Zhang, S. G.1; Zhang, X. W.1; Yin, Z. G.1; Wang, J. X.2; Dong, J. J.1; Wang, Z. G.1; Qu, S.1; Cui, B.3; Wowchak, A. M.3; Dabiran, A. M.3
刊名	Journal of applied physics
	2011-05-01
卷号	109期号:9页码:6
ISSN号	0021-8979
DOI	10.1063/1.3590399
通讯作者	Zhang, x. w.(xwzhang@semi.ac.cn)
英文摘要	The effects of the growth temperature and thickness of aln layer on the electroluminescence (el) performance of n-zno/aln/p-gan devices have been systematically investigated. it is found that the higher growth temperature of aln layer (t(aln)) may facilitate the improvement of el performance of the device, which is attributed to that the crystalline quality of aln layer improves with increasing growth temperatures taln. besides the crystallinity of aln layer, the thickness of aln barrier layer plays an important role on the performance of the device. the thinner aln layer is not enough to cover the whole surface of gan, while the thicker aln layer is unfavorable to the tunneling of carriers and many of electrons will be captured and recombined nonradiatively via the deep donors within the thick aln layer. we have demonstrated that the aln layer at the growth temperature of 700 degrees c with an optimized thickness of around 10 nm could effectively confine the injected carriers and suppress the formation of interfacial layer, thus, the el performance of n-zno/aln/p-gan device could be significantly improved. (c) 2011 american institute of physics. [doi:10.1063/1.3590399]
WOS关键词	UV ELECTROLUMINESCENCE ; THIN-FILMS ; ZNO
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000290588500069
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428197
专题	半导体研究所
通讯作者	Zhang, X. W.
作者单位	1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol R&D Ctr, Beijing 100083, Peoples R China 3.SVT Associates Inc, Eden Prairie, MN 55344 USA
推荐引用方式 GB/T 7714	Zhang, S. G.,Zhang, X. W.,Yin, Z. G.,et al. Improvement of electroluminescent performance of n-zno/aln/p-gan light-emitting diodes by optimizing the aln barrier layer[J]. Journal of applied physics,2011,109(9):6.
APA	Zhang, S. G..,Zhang, X. W..,Yin, Z. G..,Wang, J. X..,Dong, J. J..,...&Chow, P. P..(2011).Improvement of electroluminescent performance of n-zno/aln/p-gan light-emitting diodes by optimizing the aln barrier layer.Journal of applied physics,109(9),6.
MLA	Zhang, S. G.,et al."Improvement of electroluminescent performance of n-zno/aln/p-gan light-emitting diodes by optimizing the aln barrier layer".Journal of applied physics 109.9(2011):6.

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