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| Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108
Wang B; Li ZC; Yao R; Liang M; Yan FW; Wang GH
  收藏 | 浏览/下载：93/5 | 提交时间：2011/07/05
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| Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer 期刊论文
materials science in semiconductor processing, 2009, 卷号: 12, 期号: 6, 页码: 233-237
作者: Zhao J
收藏 | 浏览/下载：43/4 | 提交时间：2011/07/05
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| Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy 期刊论文
journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293
Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.)
收藏 | 浏览/下载：20/0 | 提交时间：2010/04/11
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| Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate 期刊论文
journal of crystal growth, 2003, 卷号: 254, 期号: 3-4, 页码: 348-352
作者: Zhang SM
收藏 | 浏览/下载：230/30 | 提交时间：2010/08/12
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| Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells 会议论文
10th international conference on high pressures in semiconductor physics (hpsp-x), guildford, england, aug 05-08, 2002
Li Q; Fang ZL; Xu SJ; Li GH; Xie MH; Tong SY; Zhang XH; Liu W; Chua SJ
收藏 | 浏览/下载：13/0 | 提交时间：2010/11/15
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| Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD 期刊论文
journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 248-253
作者: Zhang SM
收藏 | 浏览/下载：292/3 | 提交时间：2010/08/12
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| Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD 期刊论文
ferroelectrics, 2002, 卷号: 271, 期号: 0, 页码: 1707-1713
Wang H; Shang SX; Yao WF; Hou Y; Xu XH; Wang D; Wang M; Yu JZ
收藏 | 浏览/下载：80/0 | 提交时间：2010/08/12
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| The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy 期刊论文
journal of crystal growth, 1998, 卷号: 193, 期号: 1-2, 页码: 23-27
Liu XL; Lu DC; Wang LS; Wang XH; Wang D; Lin LY
收藏 | 浏览/下载：32/0 | 提交时间：2010/08/12
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| Kinetics and transport model for the chemical vapor epitaxy of GexSi1-x 期刊论文
journal of crystal growth, 1997, 卷号: 172, 期号: 0, 页码: 381-388
Jin XJ; Liang JW
收藏 | 浏览/下载：9/0 | 提交时间：2010/11/17
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| The dependence of GexSi1-x epitaxial growth on GeH4 flow using chemical vapour deposition 期刊论文
journal of materials science-materials in electronics, 1997, 卷号: 8, 期号: 6, 页码: 405-408
Jin XJ; Liang JW
收藏 | 浏览/下载：19/0 | 提交时间：2010/08/12 |
