Kinetics and transport model for the chemical vapor epitaxy of GexSi1-x

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	Kinetics and transport model for the chemical vapor epitaxy of GexSi1-x
	Jin XJ ; Liang JW
刊名	journal of crystal growth
	1997
卷号	172 期号:0 页码:381-388
关键词	ATMOSPHERIC-PRESSURE DEPOSITION GROWTH SIH2CL2 LAYERS SI
ISSN号	0022-0248
通讯作者	jin xj chinese acad sciinst semicondpob 912beijing 100083peoples r china.
中文摘要	a numerical model that combines mass transport and surface kinetics was applied, for the first time, to the chemical vapor epitaxy of gexsi1-x. the temperature, velocity and concentration fields were calculated from the conservation equations for energy, momentum and species coupled with the boundary conditions on the growth surface which were determined by surface kinetics. the deposition rates of si and ge were assumed to be limited, respectively, by surface kinetics and mass transport. a theoretical relation between the initial conditions and the ge composition in the solid was established. the calculated growth rate as well as the ge composition in the solid and its dependence on growth temperature agree well with experimental data.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15271]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jin XJ,Liang JW. Kinetics and transport model for the chemical vapor epitaxy of GexSi1-x[J]. journal of crystal growth,1997,172(0):381-388.
APA	Jin XJ,&Liang JW.(1997).Kinetics and transport model for the chemical vapor epitaxy of GexSi1-x.journal of crystal growth,172(0),381-388.
MLA	Jin XJ,et al."Kinetics and transport model for the chemical vapor epitaxy of GexSi1-x".journal of crystal growth 172.0(1997):381-388.