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Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes 期刊论文
journal of luminescence, 2014, 卷号: 155, 页码: 238-243
Yang, Yujue; Ma, Ping; Wei, Xuecheng; Yan, Dan; Wang, Yafang; Zeng, Yiping
收藏  |  浏览/下载:18/0  |  提交时间:2015/03/19
Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes 会议论文
symposium on quantum confined semiconductor nanostructures held at the 2002 mrs fall meeting, boston, ma, dec 02, 2001-dec 05, 2002
作者:  Jin P;  Li CM;  Xu B;  Ye XL
收藏  |  浏览/下载:14/2  |  提交时间:2010/10/29
DEEP LEVEL LUMINESCENCE OF GAAS-GA1-XALXAS DOUBLE HETEROJUNCTION LASER 期刊论文
chinese physics, 1982, 卷号: 2, 期号: 3, 页码: 833-840
WANG SW; WANG ZM; XU JZ
收藏  |  浏览/下载:10/0  |  提交时间:2010/11/15


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