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Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes 会议论文
symposium on quantum confined semiconductor nanostructures held at the 2002 mrs fall meeting, boston, ma, dec 02, 2001-dec 05, 2002
作者:  Jin P;  Li CM;  Xu B;  Ye XL
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