| Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes | |
| Yang, Yujue ; Ma, Ping ; Wei, Xuecheng ; Yan, Dan ; Wang, Yafang ; Zeng, Yiping | |
| 刊名 | journal of luminescence
 |
| 2014 | |
| 卷号 | 155页码:238-243 |
| 学科主题 | 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2015-03-19 |
| 内容类型 | 期刊论文 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/26016]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Yang, Yujue,Ma, Ping,Wei, Xuecheng,et al. Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes[J]. journal of luminescence,2014,155:238-243. |
| APA | Yang, Yujue,Ma, Ping,Wei, Xuecheng,Yan, Dan,Wang, Yafang,&Zeng, Yiping.(2014).Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes.journal of luminescence,155,238-243. |
| MLA | Yang, Yujue,et al."Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes".journal of luminescence 155(2014):238-243. |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论