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浏览/检索结果: 共12条，第1-10条 帮助 限定条件 学科主题：半导体材料    发表日期：2009     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Valence band offset of ZnO/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy 期刊论文 journal of physics d-applied physics, 2009, 卷号: 42, 期号: 9, 页码: art. no. 095305 作者:  Jia CH;  Zhou XL 收藏  |  浏览/下载：171/27  |  提交时间：2010/03/08 Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy (vol 94, 052101, 2009) 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 12, 页码: art. no. 129901 作者:  Wei HY;  Song HP;  Jiao CM 收藏  |  浏览/下载：379/108  |  提交时间：2010/03/08 aluminium compounds  core levels  III-V semiconductors  magnesium compounds  semiconductor heterojunctions  semiconductor-insulator boundaries  X-ray photoelectron spectra   Effect of a step quantum well structure and an electric-field on the Rashba spin splitting 期刊论文 半导体学报, 2009, 卷号: 30, 期号: 6, 页码: 11-14 作者:  Hao Guodong;  Chen Yonghai 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/23 Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy 期刊论文 applied optics, 2009, 卷号: 48, 期号: 9, 页码: 1715-1720 Zhang YJ; Chang BK; Yang Z; Niu J; Xiong YJ; Shi F; Guo H; Zeng YP 收藏  |  浏览/下载：65/25  |  提交时间：2010/03/08 GAAS PHOTOCATHODES  GALLIUM-ARSENIDE  ALXGA1-XAS  DIFFUSION  SURFACE  ENERGY   Effect of silver growth temperature on the contacts between Ag and ZnO thin films 期刊论文 science in china series e-technological sciences, 2009, 卷号: 52, 期号: 9, 页码: 2779-2784 作者:  Li XK 收藏  |  浏览/下载：90/1  |  提交时间：2010/03/08 ZnO  Schottky barrier  interface  MSM structure   Dislocation core effect scattering in a quasitriangle potential well 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102 作者:  Wei HY 收藏  |  浏览/下载：236/104  |  提交时间：2010/03/08 aluminium compounds  carrier density  carrier mobility  dislocation density  dislocation scattering  gallium compounds  III-V semiconductors  semiconductor heterojunctions  wide band gap semiconductors   Solid source MBE growth of quantum cascade lasers 期刊论文 applied physics a-materials science & processing, 2009, 卷号: 97, 期号: 3, 页码: 527-532 Liu FQ (Liu Feng-Qi); Li L (Li Lu); Wang LJ (Wang Lijun); Liu JQ (Liu Junqi); Zhang W (Zhang Wei); Zhang QD (Zhang Quande); Liu WF (Liu Wanfeng); Lu QY (Lu Quanyong); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：161/59  |  提交时间：2010/03/08 CONTINUOUS-WAVE OPERATION   Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE 期刊论文 chinese physics letters, 2009, 卷号: 26, 期号: 9, 页码: art. no. 096801 作者:  Yang JK;  Wei TB;  Duan RF 收藏  |  浏览/下载：73/3  |  提交时间：2010/03/08 VAPOR-PHASE EPITAXY  DISLOCATIONS  SUBSTRATE  LAYER   Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301 作者:  Jin P;  Wei HY;  Song HP 收藏  |  浏览/下载：310/47  |  提交时间：2010/03/08 conduction bands  III-V semiconductors  II-VI semiconductors  indium compounds  interface states  polarisation  semiconductor heterojunctions  valence bands  wide band gap semiconductors  X-ray photoelectron spectra  zinc compounds   Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 10, 页码: art. no. 103108 作者:  Xu B;  Ye XL 收藏  |  浏览/下载：68/0  |  提交时间：2010/03/08 aluminium compounds  gallium arsenide  III-V semiconductors  internal stresses  reflectivity  semiconductor heterojunctions  semiconductor quantum wells