Effect of a step quantum well structure and an electric-field on the Rashba spin splitting

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	Effect of a step quantum well structure and an electric-field on the Rashba spin splitting
	Hao Guodong; Chen Yonghai
刊名	半导体学报
	2009
卷号	30 期号:6 页码:11-14
中文摘要	spin splitting of conduction subbands in al_(0.3)ga_(0.7)as/gaas/al_xga_(1-x)as/al_(0.3)ga_(0.7)as step quantum wells induced by interface and electric field related rashba effects is investigated theoretically by the method of finite difference. the dependence of the spin splitting on the electric field and the well structure, which is controlled by the well width and the step width, is investigated in detail. without an external electric field, the spin splitting is induced by an in terface related rashba term due to the built-in structure inversion asymmetry. applying the external electric field to the step qw, the rashba effect can be enhanced or weakened, depending on the well structure as well as the direction and the magnitude of the electric field. the spin splitting is mainly controlled by the interface related rashba term under a negative and a stronger positive electric field, and the contribution of the electric field related rashba term dominates in a small range of a weaker positive electric field.a method to determine the interface parameter is proposed.the results show that the step qws might be used as spin switches.
英文摘要	spin splitting of conduction subbands in al_(0.3)ga_(0.7)as/gaas/al_xga_(1-x)as/al_(0.3)ga_(0.7)as step quantum wells induced by interface and electric field related rashba effects is investigated theoretically by the method of finite difference. the dependence of the spin splitting on the electric field and the well structure, which is controlled by the well width and the step width, is investigated in detail. without an external electric field, the spin splitting is induced by an in terface related rashba term due to the built-in structure inversion asymmetry. applying the external electric field to the step qw, the rashba effect can be enhanced or weakened, depending on the well structure as well as the direction and the magnitude of the electric field. the spin splitting is mainly controlled by the interface related rashba term under a negative and a stronger positive electric field, and the contribution of the electric field related rashba term dominates in a small range of a weaker positive electric field.a method to determine the interface parameter is proposed.the results show that the step qws might be used as spin switches.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:00:01导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:00:01z (gmt). no. of bitstreams: 1 3699.pdf: 647369 bytes, checksum: 313cdff7bcb7e4272417a69d33cd796c (md5) previous issue date: 2009; the state key development program for basic research of china,the national natural science foundation of china; institute of semiconductors,chinese academy of sciences
学科主题	半导体材料
收录类别	CSCD
资助信息	the state key development program for basic research of china,the national natural science foundation of china
语种	英语
公开日期	2010-11-23 ; 2011-04-28
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15761]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Hao Guodong,Chen Yonghai. Effect of a step quantum well structure and an electric-field on the Rashba spin splitting[J]. 半导体学报,2009,30(6):11-14.
APA	Hao Guodong,&Chen Yonghai.(2009).Effect of a step quantum well structure and an electric-field on the Rashba spin splitting.半导体学报,30(6),11-14.
MLA	Hao Guodong,et al."Effect of a step quantum well structure and an electric-field on the Rashba spin splitting".半导体学报 30.6(2009):11-14.