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浏览/检索结果: 共2条，第1-2条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Addressing Failure and Aging Degradation in MRAM/MeRAM-on-FDSOI Integration 期刊论文 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2019, 卷号: 66, 页码: 239-250 作者:  Cai, Hao;  Wang, You;  Naviner, Lirida Alves de Barros;  Liu, Xinning;  Shan, Weiwei 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/30 Fully depleted silicon-on-insulator (FDSOI)  magnetic tunnel junction (MTJ)  spin transfer torque magnetic random access memory (STT-MRAM)  voltage-controlled magnetic anisotropy (VCMA)  magnetoelectric random access memory (MeRAM)  aging  reliability  variability   Self-Adaptive Write Circuit for Magnetic Tunneling Junction Memory With Voltage-Controlled Magnetic Anisotropy Effect 期刊论文 IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2018, 卷号: 17, 页码: 492-499 作者:  Long, Mingzhi;  Zeng, Lang;  Gao, Tianqi;  Zhang, Deming;  Qin, Xiaowan 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/30 Magnetoelectric random access memory (MeRAM)  voltage controlled magnetic anisotropy (VCMA)  magnetic tunneling junction (MTJ)  write circuit  self-adaptive