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	Self-Adaptive Write Circuit for Magnetic Tunneling Junction Memory With Voltage-Controlled Magnetic Anisotropy Effect
	Long, Mingzhi; Zeng, Lang; Gao, Tianqi; Zhang, Deming; Qin, Xiaowan; Zhang, Youguang; Zhao, Weisheng
刊名	IEEE TRANSACTIONS ON NANOTECHNOLOGY
	2018
卷号	17页码:492-499
关键词	Magnetoelectric random access memory (MeRAM) voltage controlled magnetic anisotropy (VCMA) magnetic tunneling junction (MTJ) write circuit self-adaptive
ISSN号	1536-125X
DOI	10.1109/TNANO.2018.2815721
URL标识	查看原文
收录类别	SCIE
WOS记录号	WOS:000432203200020
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5934379
专题	北京航空航天大学
推荐引用方式 GB/T 7714	Long, Mingzhi,Zeng, Lang,Gao, Tianqi,et al. Self-Adaptive Write Circuit for Magnetic Tunneling Junction Memory With Voltage-Controlled Magnetic Anisotropy Effect[J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY,2018,17:492-499.
APA	Long, Mingzhi.,Zeng, Lang.,Gao, Tianqi.,Zhang, Deming.,Qin, Xiaowan.,...&Zhao, Weisheng.(2018).Self-Adaptive Write Circuit for Magnetic Tunneling Junction Memory With Voltage-Controlled Magnetic Anisotropy Effect.IEEE TRANSACTIONS ON NANOTECHNOLOGY,17,492-499.
MLA	Long, Mingzhi,et al."Self-Adaptive Write Circuit for Magnetic Tunneling Junction Memory With Voltage-Controlled Magnetic Anisotropy Effect".IEEE TRANSACTIONS ON NANOTECHNOLOGY 17(2018):492-499.

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