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浏览/检索结果: 共6条，第1-6条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Band engineering of valleytronics WSe2-MoS2 heterostructures via stacking form, magnetic moment and thickness 期刊论文 CHINESE PHYSICS B, 2023, 卷号: 32 作者:  Wu, Yanwei;  Zhang, Zongyuan;  Ma, Liang;  Liu, Tao;  Hao, Ning 收藏  |  浏览/下载：8/0  |  提交时间：2023/11/10 valleytronics  thickness  stacking  magnetic moment   Fundamental band gap and alignment of two-dimensional semiconductors explored by machine learning* 期刊论文 CHINESE PHYSICS B, 2020, 卷号: 29, 期号: 4, 页码: 9 作者:  Zhu, Zhen;  Dong, Baojuan;  Guo, Huaihong;  Yang, Teng;  Zhang, Zhidong 收藏  |  浏览/下载：27/0  |  提交时间：2021/02/02 two-dimensional semiconductors  machine learning   Fundamental band gap and alignment of two-dimensional semiconductors explored by machine learning* 期刊论文 CHINESE PHYSICS B, 2020, 卷号: 29, 期号: 4, 页码: 9 作者:  Zhu, Zhen;  Dong, Baojuan;  Guo, Huaihong;  Yang, Teng;  Zhang, Zhidong 收藏  |  浏览/下载：28/0  |  提交时间：2021/02/02 two-dimensional semiconductors  machine learning   Fundamental band gap and alignment of two-dimensional semiconductors explored by machine learning 期刊论文 CHINESE PHYSICS B, 2020, 卷号: 29, 期号: 4 作者:  Zhu, Zhen;  Dong, Baojuan;  Guo, Huaihong;  Yang, Teng;  Zhang, Zhidong 收藏  |  浏览/下载：26/0  |  提交时间：2021/02/03 PH3-treated TiO2nanorods with dual-doping effect for photoelectrochemical oxidation of water 期刊论文 Journal of Physical Chemistry C, 2016, 卷号: 120, 期号: 39, 页码: 22195-22201 作者:  Qin, Dong-Dong;  Wang, Xue-Huai;  Li, Yang;  Gu, Jing;  Ning, Xing-Ming 收藏  |  浏览/下载：26/0  |  提交时间：2017/01/13 Titanium dioxide  Electrochemistry  Energy gap  Light  Nanorods  Oxide minerals  Oxide semiconductors  Photocurrents  Photons  Semiconductor doping  Temperature  X ray photoelectron spectroscopy  Charge recombinations  Conducting substrates  Injection efficiency  Photo-electrochemical oxidations  Photocatalytic activities  Photoelectrochemical performance  Photogenerated electrons  Valence-band maximums   First-principle calculation of electronic structure and stability in N-doped ZnO nanowires 期刊论文 Kuei Suan Jen Hsueh Pao/Journal of the Chinese Ceramic Society, 2013, 卷号: 41, 期号: [db:dc_citation_issue], 页码: 1697-1703 作者:  Fu, Yanhua;  Li, Yuanjie 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/03 Direct band gap semiconductors  First principle calculations  First principles  First principles method  Formation energies  Nitrogen-doping  Valence-band maximums  Zinc oxide nanowires