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北京大学 [13]
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期刊论文 [14]
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Physics [2]
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Long-term variations of X-ray pulse profiles for the Crab pulsar: data analysis and modeling
期刊论文
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2020, 卷号: 63, 期号: 10, 页码: 109511
作者:
Shang, LunHua
;
Du, YuanJie
;
Cui, XiangQun
;
Dang, ShiJun
;
Lu, JiGuang
收藏
  |  
浏览/下载:51/0
  |  
提交时间:2020/06/28
radiation mechanisms
pulsars
X-ray
Moderate point: Balanced entropy and enthalpy contributions in soft matter
期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 3, 页码: 30506
作者:
Wang, YT (reprint author), Chinese Acad Sci, Inst Theoret Phys, CAS Key Lab Theoret Phys, Beijing 100190, Peoples R China.
;
He, BJ
;
Wang, YT
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浏览/下载:22/0
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提交时间:2018/01/29
Moderate Point
Balanced Entropy
Enthalpy Contribution
Moderate point: Balanced entropy and enthalpy contributions in soft matter
期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 3, 页码: 30506
作者:
He, BJ
;
Wang, YT
;
Wang, YT (reprint author), Chinese Acad Sci, Inst Theoret Phys, CAS Key Lab Theoret Phys, Beijing 100190, Peoples R China.
;
Wang, YT (reprint author), Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China.
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浏览/下载:11/0
  |  
提交时间:2017/12/21
Moderate Point
Balanced Entropy
Enthalpy Contribution
Nanowire Transistor Solutions for 5nm and Beyond
其他
2016-01-01
Asenov, A.
;
Wang, Y.
;
Cheng, B.
;
Wang, X.
;
Asenov, P.
;
Al-Ameri, T.
;
Georgiev, V. P.
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  |  
浏览/下载:6/0
  |  
提交时间:2017/12/03
Compact model
Monte Carlo
nanowire transistor
Poisson-Schrodinger
SRAM
statistical variability
INTRINSIC PARAMETER FLUCTUATIONS
SIMULATION
MOSFETS
VARIABILITY
Near-Infrared-Emitting in Vivo pH Nanosensors Based on Doped- Quantum Dots for Fluorescence Lifetime Imaging
会议论文
第十届中美华人纳米论坛(The 10th Sino-US Nano Forum), Wuhan, China
作者:
Li Zhang
;
Chi Chen
;
Pengfei Zhang
;
Xiaoqing Meng
;
Yalin Lv
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浏览/下载:17/0
  |  
提交时间:2016/01/27
Representation of fluctuation features in pathological knee joint vibroarthrographic signals using kernel density modeling method
期刊论文
http://dx.doi.org/10.1016/j.medengphy.2014.07.008, 2014
Yang, Shanshan
;
Cai, Suxian
;
Zheng, Fang
;
Wu, Yunfeng
;
Liu, Kaizhi
;
Wu, Meihong
;
Zou, Quan
;
Chen, Jian
;
吴云峰
;
吴梅红
;
邹权
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浏览/下载:4/0
  |  
提交时间:2015/07/22
Classification (of information)
Computer aided analysis
Computerized tomography
Fractals
Signal processing
Signal receivers
Support vector machines
Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part I-Modeling and Simulation Method
期刊论文
ieee电子器件汇刊, 2013
Jiang, Xiaobo
;
Wang, Runsheng
;
Yu, Tao
;
Chen, Jiang
;
Huang, Ru
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浏览/下载:11/0
  |  
提交时间:2015/11/10
Auto-correlation function
cross-correlation
line-edge-roughness (LER)
line-width-roughness (LWR)
modeling
variability
INTRINSIC PARAMETER FLUCTUATIONS
VARIABILITY
MOSFETS
DECANANOMETER
PERFORMANCE
Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part II-Experimental Results and Impacts on Device Variability
期刊论文
ieee电子器件汇刊, 2013
Wang, Runsheng
;
Jiang, Xiaobo
;
Yu, Tao
;
Fan, Jiewen
;
Chen, Jiang
;
Pan, David Z.
;
Huang, Ru
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2015/11/10
FinFET
line-edge roughness (LER)
line-width roughness (LWR)
nanowire
variability
INTRINSIC PARAMETER FLUCTUATIONS
FINFET MATCHING PERFORMANCE
MOSFETS
DECANANOMETER
NANOWIRES
OXIDATION
NOISE
Back-Gate Bias Dependence of the Statistical Variability of FDSOI MOSFETs With Thin BOX
期刊论文
ieee电子器件汇刊, 2013
Yang, Yunxiang
;
Markov, Stanislav
;
Cheng, Binjie
;
Zain, Anis Suhaila Mohd
;
Liu, Xiaoyan
;
Asenov, Asen
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/13
Back-gate bias
line edge roughness (LER)
metal gate granularity (MGG)
random dopant fluctuation (RDF)
statistical variability (SV)
thin buried oxide (BOX)
INTRINSIC PARAMETER FLUCTUATIONS
SIMULATION
DECANANOMETER
IMPACT
Investigation on Variability in Metal-Gate Si Nanowire MOSFETs: Analysis of Variation Sources and Experimental Characterization
期刊论文
ieee电子器件汇刊, 2011
Wang, Runsheng
;
Jing Zhuge
;
Huang, Ru
;
Yu, Tao
;
Zou, Jibin
;
Kim, Dong-Won
;
Park, Donggun
;
Wang, Yangyuan
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/10
Line-edge roughness (LER)
metal-gate work function variation (WFV)
modeling
random dopant fluctuation (RDF)
Si nanowire metal-oxide-semiconductor field-effect transistor (MOSFET) (SNWT)
variability
INTRINSIC PARAMETER FLUCTUATIONS
THRESHOLD VOLTAGE FLUCTUATION
CARRIER TRANSPORT
PERFORMANCE
IMPACT
TRANSISTORS
CMOS
DECANANOMETER
INTEGRATION
MOBILITY
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