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CORC

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SERS spectral evolution of azo-reactions mediated by plasmonic Au@Ag core-shell nanorods 期刊论文
NANOSCALE ADVANCES, 2022
作者:  Hu, Mengen;  Huang, Zhulin;  Liu, Rui;  Zhou, Ningning;  Tang, Haibin
收藏  |  浏览/下载：15/0  |  提交时间：2022/12/22
Au nanobipyramids with Pt decoration enveloped in TiO2 nanoboxes for photocatalytic reactions 期刊论文
NANOSCALE ADVANCES, 2021
作者:  Gao, Weijian;  Kan, Caixia;  Ke, Shanlin;  Yun, Qinru;  Zhu, Xingzhong
收藏  |  浏览/下载：19/0  |  提交时间：2021/08/31
TID Response and Radiation-Enhanced Hot-Carrier Degradation in 65-nm nMOSFETs: Concerns on the Layout-Dependent Effects 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 8, 页码: 1565-1570
作者:  Ren, ZX (Ren, Zhexuan);  1An, X (An, Xia) 1;  Li, GS (Li, Gensong) 1;  Liu, JY (Liu, Jingyi) 1;  Xun, MZ (Xun, Mingzhu) 2
收藏  |  浏览/下载：34/0  |  提交时间：2021/09/22
A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs 期刊论文
RESULTS IN PHYSICS, 2019, 卷号: 13, 期号: 6, 页码: 1-5
作者:  Zhao, JH (Zhao, Jinghao)[ 1,2,3 ];  Zheng, QW (Zheng, Qiwen)[ 1,2 ];  Cui, JW (Cui, Jiangwei)[ 1,2 ];  Zhou, H (Zhou, Hang)[ 1,2,3 ];  Liang, XW (Liang, Xiaowen)[ 1,2,3 ]
收藏  |  浏览/下载：29/0  |  提交时间：2020/03/20
Degradation induced by hot carrier and cold carrier in 65-nm NMOSFETs with enclosed gate and two-edged gate layouts 期刊论文
2018, 卷号: 13, 期号: 8, 页码: 1096-1100
作者:  Shen, Jingyu;  Zhang, Ming;  Li, Wei;  Fan, Xue;  Li, Jianjun
收藏  |  浏览/下载：12/0  |  提交时间：2019/12/13
Abnormal Recovery Phenomenon Induced by Hole Injection During Hot Carrier Degradation in SOI n-MOSFETs 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Lu, Ying-Hsin; Chang, Ting-Chang; Chen, Li-Hui; Lin, Yu-Shan; Liu, Xi-Wen; Liao, Jih-Chien; Lin, Chien-Yu; Lien, Chen-Hsin; Chang, Kuan-Chang; Zhang, Sheng-Dong
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
The Impact of Self-Heating on HCI Reliability in High-Performance Digital Circuits 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Jiang, Hai; Shin, SangHoon; Liu, Xiaoyan; Zhang, Xing; Alam, Muhammad Ashraful
收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03
星用纳米MOS器件的总剂量辐射效应与NBTI效应研究 学位论文
硕士, 北京: 中国科学院大学, 2016
作者:  余德昭
收藏  |  浏览/下载：33/0  |  提交时间：2016/09/27
Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer 期刊论文
Microelectronics Reliability, 2016
作者:  Luo WC(罗维春);  Yang H(杨红);  Wang WW(王文武);  Zhu HL(朱慧珑);  Zhao C(赵超)
收藏  |  浏览/下载：14/0  |  提交时间：2017/05/09
Total dose responses and reliability issues of 65 nm NMOSFETs 期刊论文
Journal of Semiconductors, 2016, 卷号: 37, 期号: 6, 页码: 133-139
作者:  Yu DZ(余德昭);  Zheng QW(郑齐文);  Cui JW(崔江维);  Zhou H(周航);  Yu XF(余学峰)
收藏  |  浏览/下载：17/0  |  提交时间：2017/10/12

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