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北京大学 [13]
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新疆理化技术研究所 [8]
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Experimental investigation on total-ionizing-dose radiation effects on the electrical properties of SOI-LIGBT
期刊论文
SOLID-STATE ELECTRONICS, 2021, 卷号: 175, 期号: 1, 页码: 1-7
作者:
Yang, GG (Yang, Guangan)[ 1 ]
;
Wu, WR (Wu, Wangran)[ 1 ]
;
Zhang, XY (Zhang, Xingyao)[ 2 ]
;
Tang, PY (Tang, Pengyu)[ 1 ]
;
Yang, J (Yang, Jing)[ 1 ]
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2021/03/15
SOI-LIGBT
Total-ionizing-dose
Radiation
Degradation
Method for obtaining junction temperature of power semiconductor devices combining computational fluid dynamics and thermal network
期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2020, 卷号: 976, 页码: 10
作者:
Peng, Lisha
;
Shen, Wanzeng
;
Feng, Anhui
;
Liu, Yan
;
Gao, Daqing
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2021/12/09
IGBT module
Junction temperature
Thermal network
CFD simulation
Cold plate
Assessing electric vehicle inverter to reduce energy consumption: using insulated gate bipolar transistor module to prevent the power loss and junction temperature
期刊论文
JOURNAL OF CLEANER PRODUCTION, 2019, 卷号: 224, 页码: 60-71
作者:
Li, Ling-Ling
;
Chang, Ji-Dong
;
Wu, Kuo-Jui
;
Tseng, Ming-Lang
;
Li, Zhi-Gang
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/02
Electric vehicle
Insulated gate bipolar transistor module
Switching cycle
Average power loss
Junction temperature
A Snapback-Free and Low-Loss Shorted-Anode SOI LIGBT With Self-Adaptive Resistance
期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1390-1395
作者:
Xiaorong Luo
;
Yang Yang
;
Tao Sun
;
Jie Wei
;
Diao Fan
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/17
Anodes
Resistance
Current density
Silicon-on-insulator
Insulated gate bipolar transistors
Spontaneous emission
Sun
Low-loss
p-type polysilicon
self-adaptive resistance (SAR)
shorted-anode (SA)
snapback-free
silicon on insulator lateral insulated gate bipolar transistor (SOI LIGBT)
Modeling and Analysis of a New Pressure Contact Package for High-Current Large-Die IGBTs
期刊论文
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2019, 卷号: Vol.7 No.3, 页码: 1615-1626
作者:
Zeng, Z
;
Wang, J
;
Li, F
;
Yin, X
;
Shen, ZJ
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/17
Finite-element (FE) analysis
insulated gate bipolar transistor (IGBT)
large die
pressure contact package
An Improved Proportional Base Driver for Minimizing Driver Power Consumption of SiC BJT Over Wide Current and Temperature Range
期刊论文
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2019, 卷号: Vol.7 No.3, 页码: 1727-1735
作者:
Liang, SW
;
Wang, J
;
Deng, LF
;
Shi, YZ
;
Yin, X
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/17
4H-SiC
bipolar junction transistor (BJT)
boost converter
driver loss
gate driver
Limitation of switching-self-clamping-mode "SSCM" in high voltage IGBTs
期刊论文
2019, 卷号: 96, 页码: 1-6
作者:
Wang, Cailin
;
Yang, Wuhua
;
Yang, Jing
;
Zhang, Lei
;
Zhang, Ruliang
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/12/20
Insulated gate bipolar transistor (IGBT)
Switching-self-clamping-mode (SSCM)
Dynamic avalanche
Current filament
Safe operating area (SOA)
EMI mitigation in switching power converters combining closed-loop gate drive and chaotic frequency modulation technique
期刊论文
IET POWER ELECTRONICS, 2019, 卷号: 12, 页码: 3033-3040
作者:
Cui, Tongkai
;
Ma, Qishuang
;
Xu, Ping
;
Zhang, Poming
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/12/30
electromagnetic interference
switching convertors
insulated gate bipolar transistors
power MOSFET
switching transients
switching power converters
chaotic frequency modulation technique
chaotic switching frequency modulation technique
Gaussian S-shape switching transients
EMI mitigation
closed-loop gate drive
voltage transients
current transients
power metal oxide semiconductor field effect transistor
insulated-gate bipolar transistor
conducted emissions
radiated emission
基于80C196KC控制的交变磁控电源研究
学位论文
2019
作者:
任永锦
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2020/11/05
旋转射流过渡
交变磁场
双逆变
单片机控制
Characterizations of a Proposed 3300-V Press-Pack IGBT Module Using Nanosilver Paste for High-Voltage Applications
期刊论文
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2018, 卷号: 6, 期号: 4, 页码: 2245-2253
作者:
Feng, Jingjing
;
Mei, Yunhui
;
Li, Xianbin
;
Lu, Guo-Quan
收藏
  |  
浏览/下载:63/0
  |  
提交时间:2018/12/03
Electricity
Electronic Packaging
Joining Process
Nanoporous Materials
Thermal Resistance
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